UPA862TD-T3-A规格书应用电路原装现货瑞萨-114ic电子网

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UPA862TD-T3-A	文件：254.39 Kbytes Page：20 Pages	NPN Silicon RF Twin Transistor with 2 Different Elements FEATURES •Lowvoltageoperation •2differentbuilt-intransistors(2SC5010,2SC5801) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,⏐S21e⏐2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inlowphasedistortiontransistorsuitedforOSCoperation fT=4	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
UPA862TD-T3-A	文件：291.89 Kbytes Page：12 Pages	NPN SILICON RF TWIN TRANSISTOR	CEL California Eastern Laboratories
UPA862TD-T3	文件：135.07 Kbytes Page：11 Pages	NECsNPNSILICONRFTWINTRANSISTOR DESCRIPTION NECsUPA862TDcontainsoneNE851andoneNE685NPNhighfrequencysiliconbipolarchip.TheNE851isanexcellentoscillatorchip,featuringlow1/fnoiseandhighimmunitytopushingeffects.TheNE685isanexcellentbuffertransistor,featuringlownoiseandhighgain.NECsnewult	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
UPA862TD-T3	文件：254.39 Kbytes Page：20 Pages	NPNSiliconRFTwinTransistorwith2DifferentElements FEATURES •Lowvoltageoperation •2differentbuilt-intransistors(2SC5010,2SC5801) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,⏐S21e⏐2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inlowphasedistortiontransistorsuitedforOSCoperation fT=4	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司

更多UPA862TD-T3-A供应商更新时间2024-4-28 11:00:00