DESCRIPTION

The μ PA2560 is Dual N-channel MOSFETs designed for Back light

inverters and power management applications of portable equipments.

Dual N-channel MOSFETs are assembled in one package, to

contribute minimize the equipments.

FEATURES

• 4.5 V drive available

• Low on-state resistance

RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A)

RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2 A)

• Built-in gate protection diode

• Small and surface mount package (8-pin VSOF (2429))

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 30 V

Gate to Source Voltage (VDS = 0 V) VGSS ±20 V

Drain Current (DC) ID(DC) ±4.5 A

Drain Current (pulse) Note1 ID(pulse) ±18 A

Total Power Dissipation (1 unit, 5 s) Note2 PT1 1.5 W

Total Power Dissipation (2 units, 5 s) Note2 PT2 2.2 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg −55 to +150 °C

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1

2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mm.