MAX1955

1.6Vto5.5VInput,0.5Accurate,Dual180째Out-of-PhaseStep-DownControllers

MAX1955ETI

1.6Vto5.5VInput,0.5Accurate,Dual180째Out-of-PhaseStep-DownControllers

NTE1955

IntegratedCircuitPositive3TerminalVoltageRegulator,LowDropoutVoltage,15V,1A

Description: TheNTE1955positivevoltageregulatorfeaturestheabilitytosource1Aofoutputcurrentwithadropoutvoltageoftypically0.5Vandamaximumof1Vovertheentiretemperaturerange.Furthermore,aquiescentcurrentreductioncircuithasbeenincludedwhichreducesthegroundc

PH1955L

N-channelTrenchMOSlogiclevelFET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconductio

PH1955L

LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthreshold ■Lowon-stateresistance ■175°Crated ■Surface-mountedpackage Applications ■DC-to-DCconverters ■Generalpur

RL-1955

NATIONALSEMICONDUCTORSIMPLESWITCHERAPPLICATIONS

STD1955NL

N-Channel60V(D-S)MOSFET

STD1955NL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

STU1955NL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

STUD1955NL

SuperhighdensecelldesignforlowRDS(ON).