TZM5235B

500mW Surface Mount Zener Diodes

500mWSurfaceMountZenerDiodes Features •PlanarDieConstruction •500mWPowerDissipation •VerySharpReverseCharacteristic •VeryHighStability •LowReverseCurrentLevel •StandardZenerVoltageToleranceis±5 •IdeallySuitedforAutomatedAssemblyProcesses •RoHSCompliant

TZM5235B

Small Signal Zener Diodes

FEATURES •Verysharpreversecharacteristic •Veryhighstability •Electricaldataidenticalwiththedevices1N5221Bto1N5267B •Lowreversecurrentlevel •VZ-tolerance±5 •AEC-Q101qualified •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99

TZM5235B

Small Signal Zener Diodes

FEATURES •Verysharpreversecharacteristic •Veryhighstability •Electricaldataidenticalwiththedevices1N5221Bto1N5267B •Lowreversecurrentlevel •VZ-tolerance±5 •AEC-Q101qualified •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99

TZM5235B

Small Signal Zener Diodes

FEATURES •Verysharpreversecharacteristic •Veryhighstability •Electricaldataidenticalwiththedevices1N5221Bto1N5267B •Lowreversecurrentlevel •VZ-tolerance±5 •AEC-Q101qualified •Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99

TZM5235B

Silicon Z-Diodes

Features ●Verysharpreversecharacteristic ●Veryhighstability ●Electricaldataidenticalwiththedevices1N5221B...1N5267B ●Lowreversecurrentlevel ●VZ–tolerance±5 Applications   Voltagestabilization

TZM5235B

Small Signal Zener Diodes

TZM5235B

Small Signal Zener Diodes

TZM5235B-GS08

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：DO-213AC，MINI-MELF，SOD-80 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：DIODE ZENER 6.8V 500MW SOD80

Vishay General Semiconductor - Diodes Division

TZM5235B-GS18

包装：卷带（TR） 封装/外壳：DO-213AC，MINI-MELF，SOD-80 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：DIODE ZENER 6.8V 500MW SOD80

Vishay General Semiconductor - Diodes Division

ACZRV5235B-HF

SMDZenerDiode

AD5235

2-Channel,256-PositionDigitalPotentiometer

GENERALDESCRIPTION TheAD5207providesdualchannel,256-position,digitallycontrolledvariableresistor(VR)devicesthatperformthesameelectronicadjustmentfunctionasapotentiometerorvariableresistor.EachchanneloftheAD5207containsafixedresistorwithawipercontactthatta

AD5235

8-BitDualNonvolatileMemoryDigitalPotentiometer

GENERALDESCRIPTION TheAD5232deviceprovidesanonvolatile,dual-channel,digitallycontrolledvariableresistor(VR)with256-positionresolution.Thisdeviceperformsthesameelectronicadjustmentfunctionasamechanicalpotentiometerwithenhancedresolution,solidstatereliability,ands

AD5235

NonvolatileMemory,Dual1024PositionDigitalPotentiometers

GENERALDESCRIPTION TheAD5235isadual-channel,nonvolatilememory,digitallycontrolledpotentiometer2with1024-stepresolution,offeringguaranteedmaximumlowresistortoleranceerrorof±8.Thedeviceperformsthesameelectronicadjustmentfunctionasamechanicalpotentiometerwithenh

AD5235-EP

NonvolatileMemory,Dual1024-PositionDigitalPotentiometer

GENERALDESCRIPTION TheAD5235-EPisadual-channel,nonvolatilememory,digitallycontrolledpotentiometerwith1024-stepresolution.Thedeviceperformsthesameelectronicadjustmentfunctionasamechanicalpotentiometerwithenhancedresolution,solidstatereliability,andsuperiorlowtem

AME5235

40V3.5ABuckConverter

BD5235

FreeDelayTimeSettingCMOSVoltageDetectorICSeries

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

BD5235

FreeDelayTimeSettingCMOSVoltageDetectorICSeries

BD5235

FreeDelayTimeSettingCMOSVoltageDetectorICSeries

BD5235

FreeDelayTimeSettingFreeDelayTimeSetting

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

BD5235

VoltageDetectorICAdjustableOutputDelay

SiliconMonolithicIntegratedCircuit Featues 1.Detectionvoltagelineup:2.3~6.0V 2.Highprecisiondetectionvoltage:+-1.0.