首页 >TSM4925DCS>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
TSM4925DCS | Dual P-Channel MOSFET uses advanced trench technology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | |
30V Dual P-Channel MOSFET | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
30V Dual P-Channel MOSFET | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
DualP-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitches -NotebookPCs -DesktopPCs -GameStations | VishayVishay Siliconix 威世科技 | Vishay | ||
PCHANNELENHANCEMENTMODEMOSFET Features •-30V/-6.1A, RDS(ON)=24mΩ(typ.)@VGS=-10V RDS(ON)=30mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualP-ChannelEnhancementModeMOSFET Features •-30V/-6.1A, RDS(ON)=24mΩ(typ.)@VGS=-10V RDS(ON)=30mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualP-ChannelEnhancementModeMOSFET Features •-30V/-6.1A, RDS(ON)=24mΩ(typ.)@VGS=-10V RDS(ON)=30mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
PCHANNELENHANCEMENTMODEMOSFET Features •-30V/-6.1A, RDS(ON)=24mΩ(typ.)@VGS=-10V RDS(ON)=30mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualP-ChannelEnhancementModeMOSFET Features •-30V/-6.1A, RDS(ON)=24mΩ(typ.)@VGS=-10V RDS(ON)=30mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
PCHANNELENHANCEMENTMODEMOSFET Features •-30V/-6.1A, RDS(ON)=24mΩ(typ.)@VGS=-10V RDS(ON)=30mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualP-ChannelEnhancementModeMOSFET Features •-30V/-6.1A, RDS(ON)=24mΩ(typ.)@VGS=-10V RDS(ON)=30mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
DualP-ChannelEnhancementModeMOSFET Features •-30V/-6.1A, RDS(ON)=24mΩ(typ.)@VGS=-10V RDS(ON)=30mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesign •ReliableandRugged •SOP-8Package •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPower | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
StandardCMOSVoltageDetectorIC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
StandardCMOSVoltageDetectorIC Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
VoltageDetectorIC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM |
详细参数
- 型号:
TSM4925DCS
- 功能描述:
MOSFET Dual 30V P channel MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Taiwan |
24+ |
8-SOIC(0.154,3.90mm |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
TSC |
23+ |
SOP-8 |
63000 |
原装正品现货 |
询价 | ||
原厂 |
2020+ |
SOP-8 |
20000 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
TSC |
1709+ |
SOP8 |
2818 |
普通 |
询价 | ||
TSC |
22+ |
SOP8 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
TSC |
21+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TSC/台湾半导体 |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TSC/台湾半导体 |
2022+ |
SOP-8 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
TSC/台湾半导体 |
2022+ |
SOP8 |
79999 |
询价 | |||
TSC |
1101+ |
SOP8 |
88 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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