Description

Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple Trisil™ with low capacitance.

Features

■ Bidirectional triple crowbar protection

■ Peak pulse current: IPP = 30 A , 10/1000 µs

■ Breakdown voltage:

– TPI80N: 80 V

– TPI120N: 120 V

■ Available in SO-8 package

■ Low dynamic breakover voltage:

– TPI8011N: 120 V

– TPI12011N: 170 V

Benefits

■ Low capacitance from lines to ground, allowing high speed transmission without signal attenuation

■ Good capacitance balance between lines to ensure longitudinal balance

■ Fixed breakdown voltage in both common and differential modes

■ The same surge current capability in both common and differential modes

■ A particular attention has been given to the internal wire bonding. The “4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (LdI/dt), especially for very fast transient overvoltages

Complies with following standards

■ CCITT K17-K20

– 10/700 µs, 1.5 kV

– 5/310 µs, 38 A

■ VDE 0433

– 10/700 µs, 2 kV

– 5/310 µs, 50 A

■ VDE 0878

– 1.2/50 µs, 1.5 kV

– 1/20 µs, 40 A

■ IEC 61000-4-2 level 4

– 0.5/700 µs, 1.5 kV

– 0.2/310 µs, 38 A

TPI8011NRL属于电路保护 > TVS - 晶闸管。意法半导体（ST）集团制造生产的TPI8011NRLTVS - 晶闸管基于晶闸管的瞬态电压抑制 (TVS) 器件可用于提供过压保护，在正常工作条件下近似于开路。在这些器件两端施加超过某个特定值的电压（称为击穿电压），可使它们进入近似于短路的导通状态。?这种状态一直持续至流过器件的电流因电路中的一些外部影响而降低到称为“保持电流”的最小值以下。