首页 >TNY278GN-TL>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TwoPhaseHallEffectLatchWithFGOutput GeneralDescription ATS278isanintegratedHallsensorwithtwooutputdriversandrotorspeedoutput,typicallydesignedforelectroniccommutationoftwo-phasebrush-lessDCfanapplications. Features -On-chipHallplate -Operatingvoltage:3.5V~20V -Internalbandgapregulatorallowste | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
TwoPhaseHallEffectLatchWithFGOutput GeneralDescription ATS278isanintegratedHallsensorwithtwooutputdriversandrotorspeedoutput,typicallydesignedforelectroniccommutationoftwo-phasebrush-lessDCfanapplications. Features -On-chipHallplate -Operatingvoltage:3.5V~20V -Internalbandgapregulatorallowste | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
Band-switchingdiode DESCRIPTION Planarhighperformanceband-switchingdiodeinasmallplasticSOD523VSMDpackage. FEATURES •SmallplasticSMDpackage •Continuousreversevoltage:max.35V •Continuousforwardcurrent:max.100mA •Lowdiodecapacitance:max.1.2pF •Lowdiodeforwardresistance:max.0 | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Band-switchingdiode FEATURES •SmallplasticSMDpackage •Continuousreversevoltage:max.35V •Continuousforwardcurrent:max.100mA •Lowdiodecapacitance:max.1.2pF •Lowdiodeforwardresistance:max.0.7Ω. APPLICATIONS •LowlossbandswitchinginVHFtelevisiontuners. •Surfacemountband-sw | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
VHFpush-pullpowerMOStransistor DESCRIPTION Dualpush-pullsiliconN-channelenhancementmodeverticalD-MOStransistorencapsulatedina4-lead,SOT262A1balancedflangepackagewithtwoceramiccaps.Themountingflangeprovidesthecommonsourceconnectionforthetransistors. FEATURES •Highpowergain •Easypowercontr | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
VHFPOWERMOSFET DESCRIPTION: TheASIBLF278isaDualCommonSourceN-ChannelEnhancementModeMOSFETRFPowerTransistor,Designedfor175MHz,300WTransmitterandAmplifierApplications. | ASI Advanced Semiconductor, Inc | ASI | ||
VHPpush-pullpowerMOStransistor DESCRIPTION Dualpush-pullsiliconN-channelenhancementmodeverticalD-MOStransistorencapsulatedina4-lead,SOT262A1balancedflangepackagewithtwoceramiccaps.Themountingflangeprovidesthecommonsourceconnectionforthetransistors. FEATURES •Highpowergain •Easypowercontr | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
Damperdiode DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES •Glasspassivated •Highmaximumoperatingtemperature •Lowleakagecurrent •Excellen | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
8-12GHzGaNLowNoiseAmplifier | MMICCustom MMIC Design Services, Inc. 定制 mmic定制 mmic 设计服务有限公司 | MMIC | ||
Control/Communicators | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
4000CountsManualDMM | CYRUSTEKCyrustek corporation 承永資訊承永資訊科技股份有限公司 | CYRUSTEK | ||
HybridAssembliesOPTICRECEIVERMODULES
| ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
HybridAssembliesOPTICRECEIVERMODULES
| ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
SiliconSchottkyBarrierDiodeforHighSpeedSwitching Features •Lowforwardvoltage,Lowcapacitance. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforDetector Features •Lowforwardvoltage,Lowcapacitance. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforDetector SiliconSchottkyBarrierDiodeforDetector Features •Lowforwardvoltage,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiode Features •Lowforwardvoltage,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiode | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
SiliconSchottkyBarrierDiodeforDetector | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconSchottkyBarrierDiodeforDetector | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
产品属性
- 产品编号：
TNY278GN-TL
- 制造商：
Power Integrations
- 类别：
集成电路（IC） > AC DC 转换器，离线开关
- 系列：
TinySwitch®-III
- 包装：
管件
- 输出隔离：
隔离
- 内部开关：
是
- 电压 - 击穿：
700V
- 拓扑：
反激
- 占空比：
65%
- 频率 - 开关：
132kHz
- 故障保护：
限流，开环，超温，过压，短路
- 控制特性：
EN
- 工作温度：
-40°C ~ 150°C（TJ）
- 封装/外壳：
8-SMD（7 个接脚），鸥翼
- 供应商器件封装：
SMD-8C
- 安装类型：
表面贴装型
- 描述：
IC OFFLINE SWITCH FLYBACK 8SMD
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
power(帕沃英蒂格盛) |
22+ |
SMD-8P-6.3mm |
5000 |
原装进口 实单低价 |
询价 | ||
POWER |
2020+ |
SOP7 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
SMD |
21+ |
POWER |
20000 |
全新原装公司现货
|
询价 | ||
POWER |
22+ |
SMD-8 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
POWER INTEGRATED |
2305+ |
原厂封装 |
8900 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 | ||
POWER |
21+ |
SMD-8 |
20000 |
只做原装,质量保证 |
询价 | ||
POWER |
2339+ |
SMD |
32280 |
原装现货 假一罚十!十年信誉只做原装! |
询价 | ||
POWER |
23+ |
SMD |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
21+ |
SOP8 |
22500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | |||
Power Integrations( |
22+ |
SMD-8 |
20 |
绝对原装正品 |
询价 |
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