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HSB276AS

SiliconSchottkyBarrierDiode

Features •Highforwardcurrent,Lowcapacitance. •HSB276ASwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

HSB276AYP

SiliconSchottkyBarrierDiodeforHighSpeedSwitching

Features •Highforwardcurrent,Lowcapacitance. •CMPAK-4Packageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSB276AYP

SILICONSCHOTTKYBARRIERDIODEFORHIGHSPEEDSWITCHING

Features •Highforwardcurrent,Lowcapacitance. •CMPAK-4Packageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

HSB276S

SiliconSchottkyBarrierDiodeforDetectorandMixer

Features •Highforwardcurrent,Lowcapacitance. •HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSB276S

SiliconSchottkyBarrierDiode

Features ●Highforwardcurrent,Lowcapacitance. ●HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ●CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

HSB276S

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

HSC276

SiliconSchottkyBarrierDiodeforMixer

Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi, Ltd.

日立公司

HSC276

HSC276_03

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSC276

SiliconSchottkyBarrierDiode

Features ●Highforwardcurrent,Lowcapacitance. ●UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

HSC276A

SiliconSchottkyBarrierDiodeforMixer

Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSC276A

SiliconSchottkyBarrierDiodeforMixer

Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi, Ltd.

日立公司

HSD276A

SiliconSchottkyBarrierDiodeforDetector

HitachiHitachi, Ltd.

日立公司

HSD276A

SiliconSchottkyBarrierDiodeforDetector

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSL276A

SiliconSchottkyBarrierDiodeforDetector

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSM276AS

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSM276AS

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

HSM276ASR

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASRwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSM276ASR

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASRwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

HSM276S

SiliconSchottkyBarrierDiode

Features ●Highforwardcurrent,Lowcapacitance. ●HSM276ASRwhichisinterconnectedinseriesconfiguration isdesignedforbalancedmixeruse. ●MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

HSM276S

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

产品属性

  • 产品编号:

    TNY276GN-TL

  • 制造商:

    Power Integrations

  • 类别:

    集成电路(IC) > AC DC 转换器,离线开关

  • 系列:

    TinySwitch®-III

  • 包装:

    管件

  • 输出隔离:

    隔离

  • 内部开关:

  • 电压 - 击穿:

    700V

  • 拓扑:

    反激

  • 占空比:

    65%

  • 频率 - 开关:

    132kHz

  • 故障保护:

    限流,开环,超温,过压,短路

  • 控制特性:

    EN

  • 工作温度:

    -40°C ~ 150°C(TJ)

  • 封装/外壳:

    8-SMD(7 个接脚),鸥翼

  • 供应商器件封装:

    SMD-8C

  • 安装类型:

    表面贴装型

  • 描述:

    IC OFFLINE SWITCH FLYBACK 8SMD

供应商型号品牌批号封装库存备注价格
PI
23+
SOP-8
12500
全新原装现货,假一赔十
询价
POWER
20+
SOP-7
9986
询价
POWER
23+
SMD
28500
PO主营品牌深圳百分百原装现货假一罚十绝对价优
询价
POWER
22+
SMD-8
9600
原装现货,优势供应,支持实单!
询价
POWER
21+
SMD8
6850
只做原装正品假一赔十!正规渠道订货!
询价
POWER INTEGRATED
2305+
原厂封装
8900
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
POWER
21+
SMD-8
20000
只做原装,质量保证
询价
POWER
19+/20+
SOP7
7784
询价
POWER
2339+
SMD
32280
原装现货 假一罚十!十年信誉只做原装!
询价
POWER
21+
SMD
10000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多TNY276GN-TL供应商 更新时间2024-5-31 17:33:00