| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TN2 | 包装：散装 类别：连接器，互连器件 同轴连接器（RF）适配器 描述：CONN ADAPT PLUG-JCK TRB TWIN/TRI | Cinch... Cinch Connectivity Solutions Trompeter | Cinch... | |
High temperature 20 A SCRs Features Highjunctiontemperature:Tj=150°C HighnoiseimmunitydV/dt=400V/μsupto150°C GatetriggeringcurrentIGT=10mA Peakoff-statevoltageVDRM/VRRM=600V Highturn-oncurrentrisedI/dt=100A/μs ECOPACK®2compliantcomponent TO-220FPABinsulatedpackage: | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
High temperature 20 A SCRs Features Highjunctiontemperature:Tj=150°C HighnoiseimmunitydV/dt=400V/μsupto150°C GatetriggeringcurrentIGT=10mA Peakoff-statevoltageVDRM/VRRM=600V HighturnoncurrentrisedI/dt=100A/μs ECOPACK®2compliantcomponent Description Thisdeviceoffe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
High temperature 20 A SCRs Features Highjunctiontemperature:Tj=150°C HighnoiseimmunitydV/dt=400V/μsupto150°C GatetriggeringcurrentIGT=10mA Peakoff-statevoltageVDRM/VRRM=600V HighturnoncurrentrisedI/dt=100A/μs ECOPACK®2compliantcomponent Description Thisdeviceoffe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
20 A 600 V high temperature SCR thyristors in insulated TO-220 Features •Highjunctiontemperature:Tjmax.=150°C •HighstaticimmunitydV/dt=400V/μsupto150°C •Peakoff-statevoltageVDRM/VRRM=600V •Highturn-oncurrentrisedI/dt=100A/μs •InsulatedpackageTO-220AB: –Insulatedvoltage:2500VRMS –ComplieswithUL1557(Fileref | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
High temperature 20 A SCRs Features Highjunctiontemperature:Tj=150°C HighnoiseimmunitydV/dt=400V/μsupto150°C GatetriggeringcurrentIGT=10mA Peakoff-statevoltageVDRM/VRRM=600V HighturnoncurrentrisedI/dt=100A/μs ECOPACK®2compliantcomponent Description Packagedinano | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
20 A 600 V high temperature SCR thyristors in insulated TO-220 Features •Highjunctiontemperature:Tjmax.=150°C •HighstaticimmunitydV/dt=750V/μsupto150°C •Peakoff-statevoltageVDRM/VRRM=600V •Highturn-oncurrentrisedI/dt=100A/μs •InsulatedpackageTO-220AB: –Insulatedvoltage:2500VRMS –ComplieswithUL1557(Fileref | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
SLIM POLARIZED RELAY FEATURES •SmallsizeforminimalPCboardmountingrequirements •Smallheaderareamakeshigherdensitymountingpossible •Highsensitivity:140mWnominaloperatingpower(singlesidestable3-12Vtype) •Surgevoltagewithstand:1500VFCCPart68 •Sealedconstructionallows | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
N-Channel Enhancement-Mode Vertical DMOS FETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
N-Channel Enhancement-Mode Vertical DMOS FET GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi | SUTEX Supertex, Inc | SUTEX |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
- 封装形式：
- 极限工作电压：
60V
- 最大电流允许值：
0.001A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
- 可代换的型号：
3DK30C,
- 最大耗散功率：
2W
- 放大倍数：
- 图片代号：
NO
- vtest：
60
- htest：
999900
- atest：
.001
- wtest：
2
产品属性
- 产品编号：
TN2
- 制造商：
Cinch Connectivity Solutions Trompeter
- 类别：
连接器，互连器件 > 同轴连接器（RF）适配器
- 包装：
散装
- 适配器类型：
插头至插孔
- 转换类型：
相同系列
- 适配器系列：
TRB 双轴/三轴转 TRB 双轴/三轴，双
- 中心公母：
母型至公型
- 转换自（适配器端）：
TRB 双轴/三轴插孔，母插口
- 转换至（适配器端）：
TRB 双轴/三轴插头，公插针（2）
- 样式：
U 形
- 安装类型：
自由悬挂
- 紧固类型：
卡销锁定，卡销锁定
- 中心触头镀层：
镀金
- 特性：
三焊片
- 描述：
CONN ADAPT PLUG-JCK TRB TWIN/TRI
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
82000 |
一级代理放心采购 |
询价 | |||
ST |
360000 |
原厂原装 |
1305 |
询价 | |||
PANASONIC/松下 |
13+ |
DIP |
1000 |
进口原装现货假一赔万力挺实单 |
询价 | ||
Siliconi |
23+ |
TO-92 |
20000 |
全新原装假一赔十 |
询价 | ||
VISHAY |
22+ |
N/A |
51800 |
优势价格原装现货提供BOM一站式配单服务 |
询价 | ||
INTEL/英特尔 |
QQ咨询 |
PLCC |
852 |
全新原装 研究所指定供货商 |
询价 | ||
00+ |
PLCC |
4405 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | |||
ST |
08+ |
SOT-252 |
1375 |
普通 |
询价 | ||
MITSUBISHI/三菱 |
15+ROHS |
SMD |
72800 |
自家原装货/价格漂亮/长期大量供应 |
询价 | ||
SUPERTEX |
2022+ |
SOP-8 |
79999 |
询价 |
