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TLV2314IDGKR

3-MHz, Low-Power, Internal EMI Filter, RRIO, Operational Amplifier

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TLV2314IDGKT

3-MHz, Low-Power, Internal EMI Filter, RRIO, Operational Amplifier

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

2314

HighpassFilter

KRKR Electronics, Inc.

KR Electronics, Inc.

2314-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2314-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2314-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2314-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

2314-RC

HighCurrentToroidInductorsHorizontalorverticalmount

BournsBourns Inc.

伯恩斯(邦士)

2314-V-RC

HighCurrentToroidInductors

BournsBourns Inc.

伯恩斯(邦士)

AM2314N

N-Channel20V(D-S)MOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarepowerswitch,powermanagementinportableandbattery-poweredproductssuc

AnalogPower

Analog Power

AM2314NE

N-Channel20-V(D-S)MOSFET

KeyFeatures: •LowrDS(on)trenchtechnology •Lowthermalimpedance •Fastswitchingspeed TypicalApplications: •WhiteLEDboostconverters •AutomotiveSystems •IndustrialDC/DCConversionCircuits

AnalogPower

Analog Power

AP2314GN

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheSOT-23Spackageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP2314GN-HF

Capableof2.5Vgatedrive,Loweron-resistance

Description AdvancedPowerMOSFETsutilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheSOT-23packageiswidelyusedforcommercial-industrialapplications. ▼Capableof2.5Vgatedrive ▼Loweron-res

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

APM2314

N-ChannelEnhancementModeMOSFET

Features •20V/2.8A,RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=55mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered

ANPECAnpec Electronics Corp

茂达电子

APM2314A

N-ChannelEnhancementModeMOSFET

Features •20V/2.8A,RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=55mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered

ANPECAnpec Electronics Corp

茂达电子

APM2314AC-TR

N-ChannelEnhancementModeMOSFET

Features •20V/2.8A,RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=55mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered

ANPECAnpec Electronics Corp

茂达电子

APM2314AC-TRL

N-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

BPT-BP2314

SILICONPHOTOTRANSISTOR

APPLICATIONS ●RemoteControl,●PhotoDetector,●SmokeDetector,●AutomaticControlSystem●OpticalEncoder ABSOLUTEMAXIMUMRATINGS(Ta=25) ●Collector-to-EmitterSaturationVoltageVce(SAT).(Ib=100uA)/Ic=2mA.........0.4V(Max.) ●Emitter-to-collectorBreakdownVoltage(BVeco)......

YSTONEYellow Stone Corp

早安股份早安股份有限公司

BPT-BP2314

LED

BRIGHTNINGBO BRIGHT ELECTRIC CO.,LTD

宁波明光宁波明光电器有限公司

C2314

27MHzCBTransceiverDriverApplications

SANYOSanyo

三洋三洋电机株式会社

供应商型号品牌批号封装库存备注价格
TI/德州仪器
22+
VSSOP8
46500
原装正品
询价
Texas Instruments
24+
8-TSSOP,8-MSOP(0.118,3.00mm
25000
in stock线性IC-原装正品
询价
TI
22+
MSOP8
65568
代理授权直销,原装现货,长期稳定供应
询价
TI
23+
VSSOP-8
8000
正规渠道,只有原装!
询价
TI/德州仪器
22+
VSSOP-8
500000
原装现货支持实单价优/含税
询价
TI/德州仪器
21+
VSSOP-8
3500
原装现货支持实单价优
询价
TI
22+
9500
询价
TI/德州仪器
20+
VSSOP-8
6000
全新原装
询价
TI/德州仪器
2023
VSSOP-8
6000
公司原装现货/支持实单
询价
TI(德州仪器)
23+
VSSOP8
7298
原厂可订货,技术支持,直接渠道。可签保供合同
询价
更多TLV2314IDGK供应商 更新时间2024-6-2 15:38:00