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BAS116

225mW,SMDSwitchingDiode

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

BAS116

SOT-23Plastic-EncapsulateDiodes

Features ●Lowleakagecurrentapplications ●Mediumspeedswitchingtimes Applications ●Extremefastswitches Marking: ●JV

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

BAS116

SurfaceMountSwitchingDiode

Features ◇Lowleakagecurrentapplications. ◇Mediumspeedswitchingtimes. ◇SurfacemountpackageideallysuitedforautomaticInsertion. Applications ◇Highspeedswitchingapplication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

BAS116-AU

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

VOLTAGE100VoltsPOWER250mWatts FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2pAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •Leadfreeincomplyw

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BAS116DY

Low-leakagedualswitchingdiode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolateddualdiodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:maximum5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116DY-Q

Low-leakagedualswitchingdiode

1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolateddualdiodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:maximum5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxi

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116GW

Lowleakageswitchingdiode

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116H

Lowleakageswitchingdiode

1.1Generaldescription Lowleakageswitchingdiode,encapsulatedinaSOD123Fsmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits SmallandflatleadSMDplasticpackage Lowleakagecurrent Excellentcoplanarityandimprovedthermalbehavior

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116H

75V,lowleakagediodeinsmallSOD123Fpackage

Generaldescription Lowleakageswitchingdiode,encapsulatedinaSOD123FsmallSMDplasticpackage. Features ■SmallandflatleadSMDplasticpackage ■Lowleakagecurrent Applications ■General-purposeswitching

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BAS116HM

SwitchingDiode

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BAS116HMFH

SwitchingDiode

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BAS116HY

SwitchingDiode(Lowleakage)

Features Highreliability Smallmoldtype LowIR Application Generalswitching Structure Epitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BAS116HYFH

SwitchingDiode(Lowleakage)

Features Highreliability Smallmoldtype LowIR Application Generalswitching Structure Epitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BAS116L

SwitchingDiode

Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS116L

Low-leakagediode

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116LS

Low-leakagediode

1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Switchingtime:max.trr=3μs •Lowleakagecurrent:max.IR=5nA •Repetitivepeakreversevolt

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116LS-Q

Low-leakagediode

1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Switchingtime:max.trr=3μs •Lowleakagecurrent:max.IR=5nA •Repetitivepeakreversevolt

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116QA

Low-leakagediode

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116RF

225mWSMDSwitchingDiode

FEATURES -Lowpowerloss,highcurrentcapability,lowVF -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) MECHANICAL

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

BAS116RFG

225mW,SMDSwitchingDiode

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

详细参数

  • 型号:

    TLP116

  • 制造商:

    TOSHIBA

  • 制造商全称:

    Toshiba Semiconductor

  • 功能描述:

    Digital Isolation for A/D,D/A Conversion. High Speed Line Receiver. Microprocessor System Interfaces. Plasma Display Panel.

供应商型号品牌批号封装库存备注价格
TOS
20+
SOP5
2860
原厂原装正品价格优惠公司现货欢迎查询
询价
TOSHIBA
16+
SOP-5
3000
原装现货假一罚十
询价
东芝高品质大芯片
23+
SOP5
2000
全新原装深圳仓库现货有单必成
询价
TOSHIBA/东芝
2024+实力库存
SOP-5
50
只做原厂渠道 可追溯货源
询价
TOS
05+
SOP5
1608
询价
TOS
2016+
SOP5
6528
原装现货假一赔十
询价
TOSHIBA
11+
SOP-5
8000
全新原装,绝对正品现货供应
询价
TOSHIBA
23+
SOP5
5000
原装正品,假一罚十
询价
TOSHIBA
2339+
SOP5
6232
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
TOSHIBA
2020+
SOP-5
2000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多TLP116供应商 更新时间2024-6-19 9:19:00