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APT6011LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •T-MAX™orTO-264P

ADPOW

Advanced Power Technology

APT6011LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Iden

ADPOW

Advanced Power Technology

APT6011LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

ADPOW

Advanced Power Technology

APT6011LVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=49A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.11Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AUIPS6011

INTELLIGENTPOWERHIGHSIDESWITCH

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIPS6011

INTELLIGENTPOWERHIGHSIDESWITCH

Description TheAUIPS6011(S)(R)isafiveterminalIntelligentPowerSwitch(IPS)foruseinahighsideconfiguration.Itfeaturesshortcircuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentislimitedtotheIlimvalue.Thecurrentli

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIPS6011R

INTELLIGENTPOWERHIGHSIDESWITCH

Description TheAUIPS6011(S)(R)isafiveterminalIntelligentPowerSwitch(IPS)foruseinahighsideconfiguration.Itfeaturesshortcircuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentislimitedtotheIlimvalue.Thecurrentli

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIPS6011RTR

INTELLIGENTPOWERHIGHSIDESWITCH

Description TheAUIPS6011(S)(R)isafiveterminalIntelligentPowerSwitch(IPS)foruseinahighsideconfiguration.Itfeaturesshortcircuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentislimitedtotheIlimvalue.Thecurrentli

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIPS6011RTRL

INTELLIGENTPOWERHIGHSIDESWITCH

Description TheAUIPS6011(S)(R)isafiveterminalIntelligentPowerSwitch(IPS)foruseinahighsideconfiguration.Itfeaturesshortcircuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentislimitedtotheIlimvalue.Thecurrentli

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIPS6011RTRR

INTELLIGENTPOWERHIGHSIDESWITCH

Description TheAUIPS6011(S)(R)isafiveterminalIntelligentPowerSwitch(IPS)foruseinahighsideconfiguration.Itfeaturesshortcircuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentislimitedtotheIlimvalue.Thecurrentli

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIPS6011S

INTELLIGENTPOWERHIGHSIDESWITCH

Description TheAUIPS6011(S)(R)isafiveterminalIntelligentPowerSwitch(IPS)foruseinahighsideconfiguration.Itfeaturesshortcircuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentislimitedtotheIlimvalue.Thecurrentli

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIPS6011STRL

INTELLIGENTPOWERHIGHSIDESWITCH

Description TheAUIPS6011(S)(R)isafiveterminalIntelligentPowerSwitch(IPS)foruseinahighsideconfiguration.Itfeaturesshortcircuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentislimitedtotheIlimvalue.Thecurrentli

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIPS6011STRR

INTELLIGENTPOWERHIGHSIDESWITCH

Description TheAUIPS6011(S)(R)isafiveterminalIntelligentPowerSwitch(IPS)foruseinahighsideconfiguration.Itfeaturesshortcircuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentislimitedtotheIlimvalue.Thecurrentli

IRFInternational Rectifier

英飞凌英飞凌科技公司

C6011A

AudioAmplificationTransistor

Description ByadaptingtheSankenuniquewafer-thinnertechnique,theseNPNpowertransistorsachievepower-upbydecreasingthermalresistance,andprovidehighervoltageavalanchebreakdownrating.Thehighpower-handlingcapacityoftheTO-3Ppackageallowsasmallerfootprintonthecircuit

Allegro

Allegro MicroSystems

C6011A

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-: V(BR)CEO=200V(Min)-2SC6011 ​​​​​​​=200V(Min)-2SC6011A •GoodLinearityofhFE •ComplementtoType2SA2151/A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableope

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

C6011A

AudioAmplificationTransistor

Description ByadaptingtheSankenuniquewafer-thinnertechnique,theseNPNpowertransistorsachievepower-upbydecreasingthermalresistance,andprovidehighervoltageavalanchebreakdownrating.Thehighpower-handlingcapacityoftheTO-3Ppackageallowsasmallerfootprintonthecircuit

SankenSanken Electric Co Ltd.

三垦日本三垦

C6011RU

Isolated,60WUltra-Wide4:1InputDC/DCConverters

MPD

MPD (Memory Protection Devices)

CA6011

CascadableAmplifier2000to6000MHz

MA-COM

M/A-COM Technology Solutions, Inc.

CA6011

CascadableAmplifier2000to6000MHz

Description TheA6011RFamplifierisadiscretehybriddesign,whichusesthinfilmmanufacturingprocessesforaccurateperformanceandhighreliability. ThissinglestageGaAsFETfeedbackamplifierdesigndisplaysimpressiveperformancecharacteristicsoverabroadbandfrequencyrange.AnRF

MA-COM

M/A-COM Technology Solutions, Inc.

CA6011

CascadableAmplifier2000to6000MHz

MACOM

Tyco Electronics

供应商型号品牌批号封装库存备注价格
TOMATO
5632
2015
只做进口原装正品!现货或者订货一周货期!只要要网上
询价
TOMATO
2022+
4680
全新原装 货期两周
询价
TI
N/A
C-DIP8
5000
自己现货
询价
TI
11+
DIP-8
8000
全新原装,绝对正品现货供应
询价
TI
94+
DIP8
1570
全新原装进口自己库存优势
询价
TI
22+
DIP8
5000
主打产品,长备大量现货
询价
TI
22+
SOP8
2978
十年品牌!原装现货!!!
询价
TI
22+
DIP8
3500
原装现货,可开13%税票
询价
TI
2020+
NULL
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TI
17+
DIP8
9988
只做原装进口,自己库存
询价
更多TL6011E供应商 更新时间2024-6-7 17:02:00