首页 >TJT15022RJ>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TJT15022RJ | 包装：散装 封装/外壳：矩形外壳 类别：电阻器 底座安装电阻器 描述：RES CHAS MNT 22 OHM 5% 150W | TEConnectivityPassiveProductTE Connectivity Passive Product TE Connectivity Passive ProductTE ConnectivityPassiveProduct | TEConnectivityPassiveProduct | |
Dual,4A/2A,4MHz,Step-DownDC-DCRegulatorwithDualLDOControllers GeneralDescription TheMAX15022isadual-output,pulse-width-modulated(PWM),step-downDC-DCregulatorwithdualLDOcontrollers.Thedeviceoperatesfrom2.5Vto5.5Vandeachoutputcanbeadjustedfrom0.6Vtotheinputsupply(VAVIN).TheMAX15022deliversupto4A(regulator1)and2A(re | MaximMaximIntegrated 美信半导体 | Maxim | ||
Dual,4A/2A,4MHz,Step-DownDC-DCRegulatorwithDualLDOControllers | MaximMaximIntegrated 美信半导体 | Maxim | ||
IndependentEnableInputsforAllOutputs | MaximMaximIntegrated 美信半导体 | Maxim | ||
Dual,4A/2A,4MHz,Step-DownDC-DCRegulatorwithDualLDOControllers GeneralDescription TheMAX15022isadual-output,pulse-width-modulated(PWM),step-downDC-DCregulatorwithdualLDOcontrollers.Thedeviceoperatesfrom2.5Vto5.5Vandeachoutputcanbeadjustedfrom0.6Vtotheinputsupply(VAVIN).TheMAX15022deliversupto4A(regulator1)and2A(re | MaximMaximIntegrated 美信半导体 | Maxim | ||
Dual,4A/2A,4MHz,Step-DownDC-DCRegulatorwithDualLDOControllers | MaximMaximIntegrated 美信半导体 | Maxim | ||
Dual,4A/2A,4MHz,Step-DownDC-DCRegulatorwithDualLDOControllers | MaximMaximIntegrated 美信半导体 | Maxim | ||
IndependentEnableInputsforAllOutputs | MaximMaximIntegrated 美信半导体 | Maxim | ||
IndependentEnableInputsforAllOutputs | MaximMaximIntegrated 美信半导体 | Maxim | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •ComplementtotypeMJ15023MJ15025 •ExcellentSafeOperatingArea •HighDCCurrentGain hFE=15(Min)@IC=8Adc APPLICATIONS •Designedforhighpoweraudio,diskheadpositionersandotherlinearapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | JMNIC | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •ComplementtotypeMJ15023;MJ15025 •Excellentsafeoperatingarea •HighDCcurrentgain hFE=15(Min)@IC=8Adc APPLICATIONS •Designedforhighpoweraudio,diskheadpositionersandotherlinearapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
POWERTRANSISTOR(16A,200-250V,250W) SiliconPowerTransistors TheMJ15022andMJ15024arePowerBasepowertransistorsdesignedforhighpoweraudio,diskheadpositionersandotherlinearapplications. FEATURES •HighSafeOperatingArea •HighDCCurrentGain- hFE=15(Min)@Ic=8.0AVCE=4.0V | MOSPEC MOSPEC | MOSPEC | ||
SiliconPowerTransistors SILICONPOWERTRANSISTORS TheMJ15022andMJ15024arePowerBasepowertransistorsdesignedforhighpoweraudio,diskheadpositionersandotherlinearapplications. •HighSafeOperatingArea(100Tested)—2A@80V •HighDCCurrentGain—hFE=15(Min)@IC=8Adc | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
SILICONPOWERTRANSISTORS TheMJ15022andMJ15024arePowerBasepowertransistorsdesignedforhighpoweraudio,diskheadpositionersandotherlinearapplications. Features •HighSafeOperatingArea(100Tested)−2A@80V •HighDCCurrentGain−hFE=15(Min)@IC=8Adc •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNPLANARSILICONTRANSISTOR(AUDIOPOWERAMPLIFIERDCTODCCONVERTER) AUDIOPOWERAMPLIFIERDCTODCCONVERTER ●HighCurrentCapability ●HighPowerDissipation ●ComplementarytoMJ15023 | WINGSWing Shing Computer Components Wing Shing Computer Components | WINGS | ||
SiliconPowerTransistors TheMJ15022andMJ15024arePowerBasepowertransistorsdesignedforhighpoweraudio,diskheadpositionersandotherlinearapplications. Features •HighSafeOperatingArea(100Tested)−2A@80V •HighDCCurrentGain−hFE=15(Min)@IC=8Adc •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •ComplementtotypeMJ15023;MJ15025 •Excellentsafeoperatingarea •HighDCcurrentgain hFE=15(Min)@IC=8Adc APPLICATIONS •Designedforhighpoweraudio,diskheadpositionersandotherlinearapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconPowerTransistors SiliconPowerTransistors TheMJ15022andMJ15024arePowerBasepowertransistorsdesignedforhighpoweraudio,diskheadpositionersandotherlinearapplications. Features •HighSafeOperatingArea(100Tested)-2A@80V •HighDCCurrentGain-hFE=15(Min)@Ic=8Adc | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconPowerTransistors16AMPERESSILICONPOWERTRANSISTORS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
产品属性
- 产品编号：
TJT15022RJ
- 制造商：
TE Connectivity Passive Product
- 类别：
电阻器 > 底座安装电阻器
- 系列：
TJT
- 包装：
散装
- 容差：
±5%
- 功率 (W)：
150W
- 成分：
绕线
- 温度系数：
±260ppm/°C
- 工作温度：
-25°C ~ 250°C
- 涂层，外壳类型：
铝
- 安装特性：
螺钉孔
- 大小 / 尺寸：
4.724" 长 x 3.150" 宽（120.00mm x 80.00mm）
- 高度 - 安装（最大值）：
0.394"（10.00mm）
- 引线样式：
导线引线
- 封装/外壳：
矩形外壳
- 描述：
RES CHAS MNT 22 OHM 5% 150W
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TE |
20+ |
电阻器 |
93 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
GE |
1935+ |
N/A |
72 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
GE |
22+ |
NA |
72 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
GE |
24+25+/26+27+ |
车规-电源模块 |
3280 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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