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AOD412

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD412L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOD412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT412

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT412

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=60A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=15.8mΩ(Max) •100avalanchetested •Minimu

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT412L

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOU412

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOU412

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOU412L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOWF412

100VN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AQY412EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHAZ

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

ASJ412

2.6mm&3.5mmAUDIOJACKSSTEREO&MONOEARPHONEJACKS

ADAM-TECHAdam Technologies, Inc.

亚当科技亚当科技股份有限公司

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

供应商型号品牌批号封装库存备注价格
ST
23+
TO-3P
16900
支持样品,原装现货,提供技术支持!
询价
ST
TO-3P
36900
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST
22+
TO-3P
16900
支持样品 原装现货 提供技术支持!
询价
FAIRCHILD
08+(pbfree)
TO-220
8866
询价
ST
11+
TO-220
8000
全新原装,绝对正品现货供应
询价
FAIRCHILD
17+
TO-220
6200
100%原装正品现货
询价
FSC
2016+
TO-220
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
ST
16+
TO-220
10000
全新原装现货
询价
STMicro.
23+
TO-220
7750
全新原装优势
询价
STMRC
24+
TO-220
5000
只做原装公司现货
询价
更多TIP412供应商 更新时间2024-5-17 16:52:00