| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TIP101 | DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc | MotorolaMotorola, Inc 摩托罗拉 | Motorola | |
TIP101 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)− | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
TIP101 | NPN SILICON POWER DARLINGTONS ●DesignedforComplementaryUsewithTIP105,TIP106andTIP107 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A | POINNPower Innovations Ltd Power Innovations Ltd | POINN | |
TIP101 | POWER TRANSISTORS(8A,60-100V,80W) 8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP | MOSPEC MOSPEC | MOSPEC | |
TIP101 | Monolithic Construction With Built In Base- Emitter Shunt Resistors •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@Vce=4V,Ic=3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP105/106/107 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
TIP101 | Power Darlingtons for Linear and Switching Applications TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications | bocaBoca semiconductor corporation 博卡博卡半导体公司 | boca | |
TIP101 | PLASTIC POWER TRANSISTORS PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications | TEL TRANSYS Electronics Limited | TEL | |
TIP101 | Darlington Power Transistors (NPN) DarlingtonPowerTransistors(NPN) Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant | TAITRON TAITRON | TAITRON | |
TIP101 | NPN Plastic Medium-Power Silicon Transistors Features •MountingTorgue:5in-lbsMaximum •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollector-EmitterSaturati | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | |
TIP101 | Silicon NPN Darlington Power Transistors DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Lowcollectorsaturationvoltage ·ComplementtotypeTIP105/106/107 APPLICATIONS ·Forindustrialuse | SAVANTIC Savantic, Inc. | SAVANTIC | |
TIP101 | PLASTIC POWER TRANSISTORS PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications | CDIL CDIL | CDIL | |
TIP101 | SILICON DARLINGTON POWER TRANSISTORS NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. PNPcomplementsareTIP105-106-107 CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | |
TIP101 | PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS 8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | |
TIP101 | Monolithic Construction With Built In Base-Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=4V,IC=3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP105/106/107 | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | |
TIP101 | Plastic Medium?뭁ower Complementary Silicon Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
TIP101 | isc Silicon NPN Darlington Power Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
TIP101 | NPN Plastic Medium-Power Silicon Transistors | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | |
TIP101 | Plastic Medium-Power Complementary Silicon Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
TIP101 | Silicon Power darlington Complementary transistors | CentralCentral Semiconductor Corp 美国中央半导体 | Central | |
TIP101 | Silicon NPN Darlington Power Transistors | SAVANTIC Savantic, Inc. | SAVANTIC |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
80V
- 最大电流允许值：
8A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD647,BD899,BDW73B...D,BDX53B...F,3DK208,
- 最大耗散功率：
80W
- 放大倍数：
β>1000
- 图片代号：
B-10
- vtest：
80
- htest：
999900
- atest：
8
- wtest：
80
产品属性
- 产品编号：
TIP101
- 制造商：
Central Semiconductor Corp
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
2.5V @ 80mA，8A
- 电流 - 集电极截止（最大值）：
50µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
1000 @ 3A，4V
- 频率 - 跃迁：
4MHz
- 工作温度：
-65°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-220-3
- 供应商器件封装：
TO-220-3
- 描述：
TRANS NPN DARL 80V 8A TO220-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
06+ |
原厂原装 |
4484 |
只做全新原装真实现货供应 |
询价 | ||
ST/进口原 |
17+ |
TO-220 |
6200 |
询价 | |||
ST |
11+ |
TO-220 |
8000 |
全新原装,绝对正品现货供应 |
询价 | ||
TO-220 |
10000 |
真实现货库存 |
询价 | ||||
FSC |
2020+ |
TO-220 |
800 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ST |
1738+ |
TO-220 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ON |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ST |
18+ |
TO220 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
询价 | ||
ST |
23+ |
TO-TO-220 |
33500 |
全新原装真实库存含13点增值税票! |
询价 |
