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TC1101V中文资料PDF规格书

TC1101V
厂商型号

TC1101V

功能描述

Low Noise and Medium Power GaAs FETs

文件大小

90.14 Kbytes

页面数量

2

生产厂商 Transcom, Inc.
企业简称

TRANSCOM

中文名称

Transcom, Inc.官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-8 18:30:00

TC1101V规格书详情

DESCRIPTION

The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100 DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES

Via holes for source grounding

Low Noise Figure: NF = 0.5 dB Typical at 12 GHz

High Associated Gain: Ga = 13 dB Typical at 12 GHz

High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz

Breakdown Voltage: BVDGO ≥ 9 V

Lg = 0.25 µm, Wg = 160 µm

All-Gold Metallization for High Reliability

Tight Vp ranges control

High RF input power handling capability

100 DC Tested

产品属性

  • 型号:

    TC1101V

  • 制造商:

    TRANSCOM

  • 制造商全称:

    TRANSCOM

  • 功能描述:

    Low Noise and Medium Power GaAs FETs

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