零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MoldedAxialInductor | BournsBourns Inc. 伯恩斯(邦士) | Bourns | ||
DualAnalog-to-DigitalConverter | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
14-Bit,170MSPS/250MSPS,JESD204B,DualAnalog-to-DigitalConverter GENERALDESCRIPTION TheAD9250isadual,14-bitADCwithsamplingspeedsofupto250MSPS.TheAD9250isdesignedtosupportcommunicationsapplicationswherelowcost,smallsize,widebandwidth,andversatilityaredesired. FEATURES JESD204BSubclass0orSubclass1codedserialdigital | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
HIGHSENSITIVITYMICROPOWEROMNIPOLARHALL-EFFECTSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHSENSITIVITYMICROPOWEROMNIPOLARHALL-EFFECTSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DigitalRGB,IRandAmbientLightSensor | AVAGOAvago 安华高安华高科技 | AVAGO | ||
DigitalRGB,IRandAmbientLightSensor | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | BOARDCOM | ||
VoltageControlledOscillator | APITECH API Technologies Corp | APITECH | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
14A,-200V,0.315Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,-200V,0.300Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronha | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
15A,-200V,0.290Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
15A,-200V,0.290Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5V/1550nm/2.5Gb/sSignle-ModeGigabitInterfaceConverter(GBIC) | OPTOWAYOptoway Technology Inc 奥普薇科技奥普薇科技股份有限公司 | OPTOWAY | ||
TRANSISTORP-CHANNEL(BVdss=-200V,Rds(on)=0.315ohm,Id=-14A) InternationalRectifier’sRADHardHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffects | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
1999 |
DIP-36 |
1037 |
原装现货海量库存欢迎咨询 |
询价 | ||
TOSHIBA |
23+ |
DIP-36 |
4500 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
TOSHIBA |
D/C |
DIP |
42 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
21+ |
DIP |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | |||
TOSHIBA/东芝 |
1948+ |
DIP |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
MINI |
20+ |
200 |
MINI代理分销 常备现货! |
询价 | |||
Mini-circuits |
1000 |
询价 | |||||
TOSHIBA |
2017+ |
SOP36L |
24589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
TOSHIBA |
11+ |
SOP36 |
8000 |
全新原装,绝对正品现货供应 |
询价 | ||
TOSHIBA/东芝 |
22+ |
SOP36L |
3000 |
原装正品,支持实单 |
询价 |
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