TA6L13A

Surface Mount PAR® Transient Voltage Suppressors

FEATURES •Low-profilepackage •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhighreliabilityand automotiverequirement •Unidirectionalonly •Excell

TA6L13AHM3/H

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：DO-221AC，SMA 扁平引线 类别：电路保护 TVS - 二极管 描述：600W,13V 5%, SLIMSMAW PAR

Vishay General Semiconductor - Diodes Division

TA6L13AHM3/I

包装：卷带（TR） 封装/外壳：DO-221AC，SMA 扁平引线 类别：电路保护 TVS - 二极管 描述：600W,13V 5%, SLIMSMAW PAR

Vishay General Semiconductor - Diodes Division

SMA6L13A

TheSMA6Lseriesisdesignedspecificallytoprotectsensitiveelectronicequipmentfromvoltagetransientsinducedbylightningandothertransientvoltageevents

SMA6L13A

SMA6LSeries

SMA6L13A

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORS

SSM6L13TU

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM6L13TU

PowerManagementSwitchApplications

PowerManagementSwitchApplications High-SpeedSwitchingApplications •1.8-Vdrive •N–ch,P–ch2–in–1 •LowON–resistance:NchRDS(ON)=235mΩ(max)(@VGS=1.8V) •RDS(ON)=178mΩ(max)(@VGS=2.5V) •:PchRD

SSM6L13TU

TOSHIBAField-EffectTransistorSiliconP/NChannelMOSType

TPSMA6L13A

TransientVoltageSuppressionDiodes