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TA6F22A

Surface-Mount PAR® Transient Voltage Suppressors

FEATURES •Verylowprofile-typicalheightof0.95mm •Junctionpassivationoptimizeddesign passivatedanisotropicrectifiertechnology •TJ=185°Ccapabilitysuitableforhigh reliabilityandautomotiverequirement •Idealforautomatedplacement •Unidirectionalonly •Excellentcl

VishayVishay Siliconix

威世科技

TA6F22AHM3/6B

包装:卷带(TR) 封装/外壳:DO-221AC,SMA 扁平引线 类别:电路保护 TVS - 二极管 描述:TVS DIODE 18.8VWM 30.6VC DO221AC

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

TA6F22AHM3_A/H

包装:卷带(TR) 封装/外壳:DO-221AC,SMA 扁平引线 类别:电路保护 TVS - 二极管 描述:TVS DIODE 18.8VWM 30.6VC DO221AC

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

TA6F22AHM3_A/I

包装:卷带(TR) 封装/外壳:DO-221AC,SMA 扁平引线 类别:电路保护 TVS - 二极管 描述:TVS DIODE 18.8VWM 30.6VC DO221AC

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

6F22

Zinccarbonbatteries

PANASONICBATTERYPanasonic Battery Group

松下电器松下电器(中国)有限公司

6F22REL

Zinccarbonbatteries

PANASONICBATTERYPanasonic Battery Group

松下电器松下电器(中国)有限公司

E6F22MX

BATTERIESLITHIUMTHIONYLCHLORIDE

DUBILIERDUBILIER

DUBILIER

SM6F22NSF

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SM6F22NSF

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中積體電路大中積體電路股份有限公司

SM6F22NSFC-TUG

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中積體電路大中積體電路股份有限公司

SM6F22NSFP

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中積體電路大中積體電路股份有限公司

SM6F22NSFPC-TUG

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中積體電路大中積體電路股份有限公司

SM6F22NSU

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中積體電路大中積體電路股份有限公司

SM6F22NSUB

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中積體電路大中積體電路股份有限公司

SM6F22NSUBC-TRG

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中積體電路大中積體電路股份有限公司

SM6F22NSUBC-TUG

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中積體電路大中積體電路股份有限公司

SM6F22NSUC-TRG

N-ChannelEnhancementModeMOSFET

SINOPWERSinopower Semiconductor Inc

大中積體電路大中積體電路股份有限公司

SMA6F22A

Surface-MountTRANSZORB®TransientVoltageSuppressors

FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •Unidirectionalonly •Excellentclampingcapability •Peakpulsepower: -600W(10/1000μs) -4kW(8/20μs) •ESDcapability:IEC61000-4-2level4 -15kV(air) -8kV(contact) •MeetsMSLleve

VishayVishay Siliconix

威世科技

SMA6F22A

600WTVSinSMAFlat

Features •Peakpulsepower:600W(10/1000μs)and4kW(8/20μs) •Flatandthinpackage:1mm •Stand-offvoltagerangefrom5Vto188V •Unidirectionaltype •Lowleakagecurrent:0.2μAat25°Cand1μAat85°C •OperatingTjmax:175°C •HighpowercapabilityatTjmax.:upto40

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

SMA6F22AH

600W,12V??60VSurfaceMountTransientVoltageSuppressor

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

详细参数

  • 型号:

    TA6F22A

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 600watts 22V 5% Uni

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

供应商型号品牌批号封装库存备注价格
VIHSAY
22+23+
DO-221AC
23224
绝对原装正品全新进口深圳现货
询价
Littelfus
19+
DO-221AC
200000
询价
LITTELFUSE/力特
20+
DO-221AC
36800
原装优势主营型号-可开原型号增税票
询价
Littelfus
2023+
DO-221AC
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
VIHSAY
23+
DO-221AC
50000
全新原装正品现货,支持订货
询价
24+
DO-221AC
85000
原装现货假一赔十
询价
LITTELFUSE/力特
22+
DO-221AC
354000
询价
LITTELFUSE/力特
2019+PB
DO-221AC
85000
全新-特价大量供货房间
询价
TA6F22A-M3/6A
2019+PB
DO-221AC
85000
询价
LITTELFUSE/力特
22+
85000
询价
更多TA6F22A供应商 更新时间2024-6-3 16:50:00