零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
BandpassFilter | KRKR Electronics, Inc. KR Electronics, Inc. | KR | ||
Pneumaticmuffler | FESTOFesto Corporation. 费斯托公司德国FESTO费斯托(中国)有限公司 | FESTO | ||
NylonHoseClamps | Heyco Heyco | Heyco | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | Bourns | ||
HighCurrentToroidInductorsHorizontalorverticalmount | BournsBourns Inc. 伯恩斯(邦士) | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯(邦士) | Bourns | ||
PhotoelectronicSmokedetectorwithElectronicHeatSensing | SYSTEMSENSORSystemsensor advanced ideas. Systemsensor advanced ideas. | SYSTEMSENSOR | ||
MOSFET20VN-CHANNELENHANCEMENTMODE DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
N-Channel20-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
Plastic-EncapsulateMOSFETS FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | GWSEMI | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,4.5A,RDS(ON)=33mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO CHENMKO | CHENMKO |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Triac
- 性质:
- 封装形式:
直插封装
- 极限工作电压:
100V
- 最大电流允许值:
1.9A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
3
- 可代换的型号:
T2302…,T2302P…,T2322..L,Z0409…,
- 最大耗散功率:
- 放大倍数:
- 图片代号:
C-78
- vtest:
100
- htest:
999900
- atest:
1.9
- wtest:
0
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RCA |
21+ |
2016 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
TI |
1305+ |
BGA |
12000 |
公司特价原装现货 |
询价 | ||
ATMEL/爱特梅尔 |
2021+ |
QFN20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
1822+ |
QFN |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | |||
ATMEL |
2020+ |
QFN |
15000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ATMEL |
2023+ |
QFN |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ATMEL |
20+/21+ |
QFN |
5600 |
特价原装现货 |
询价 | ||
ATMEL |
23+ |
QFN20 |
5000 |
原装正品,假一罚十 |
询价 | ||
CK |
22+ |
156000 |
原装现货 支持实单 |
询价 | |||
3000 |
自己现货 |
询价 |