| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSV POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSV POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast | ADPOW Advanced Power Technology | ADPOW | ||
UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
DevelopmentKitUserGuide | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
DevelopmentKitUserGuide | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
Crystal | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
ChargerProtectionICwithInternalFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
SwitchedCapacitorVoltageConverterforCellular | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILERGY |
23/22+ |
QFN |
3000 |
正品代理.原厂技术支持 |
询价 | ||
矽力杰silergy |
2021+ |
DFN-16 |
546 |
询价 | |||
SILERGY/矽力杰 |
23+ |
DFN-16 |
22820 |
原装正品，支持实单 |
询价 | ||
silergy(矽力杰) |
21+ |
DFN-16 |
1000 |
询价 | |||
silergy(矽力杰) |
23+ |
DFN16 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
矽力杰 |
2年内 |
NA |
150000 |
英博尔原装优质现货订货渠道商 |
询价 | ||
SILERGY |
24+25+/26+27+ |
车规-元器件 |
43788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
silergy(矽力杰) |
24+ |
DFN-16 |
690000 |
支持实单/只做原装 |
询价 | ||
CHINA |
22+ |
D2-09A |
640 |
航宇科工半导体-央企合格优秀供方! |
询价 | ||
PERSEMI |
DIP |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
相关规格书
更多- SY87700LZI
- SZA1010T
- T062
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