首页 >SUB70N03-09P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SUB70N03-09P | N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
N-Channel30-V(D-S),175C,MOSFETPWMOptimized | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-Channel30-V(D-S),175-LCMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·FastSwitchingSpeed ·100avalanchetested APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·Highcurrentswitchingapplications ·DC-DCconverterandmotordriveapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel30-V(D-S),175C,MOSFETPWMOptimized | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-Channel30-V(D-S),175C,MOSFETPWMOptimized | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
SUB70N03-09P
- 功能描述：
MOSFET 30V 70A 93W
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2024+实力库存 |
TO-263 |
20000 |
只做原厂渠道 可追溯货源 |
询价 | ||
VISHAY |
2023+ |
TO263 |
3500 |
全新原厂原装产品、公司现货销售 |
询价 | ||
VIHSAY/SILICONIX |
2008++ |
SMD |
7000 |
新进库存/原装 |
询价 | ||
SILICON |
22+ |
TO263 |
4897 |
绝对原装!现货热卖! |
询价 | ||
SILICON |
23+ |
TO263 |
5000 |
原装正品,假一罚十 |
询价 | ||
Vishay |
17+ |
TO-263 |
6200 |
询价 | |||
VISHHY |
2021+ |
TO263 |
6030 |
百分百原装正品 |
询价 | ||
VISHAY |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 | ||
VB |
2019 |
TO-263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
SILICON |
2020+ |
SOT-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
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