STW9NB90中文资料PDF规格书
STW9NB90规格书详情
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 0.85 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
产品属性
- 型号：
STW9NB90
- 功能描述：
MOSFET N-CH 900V 9A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22 |
TO-3P |
25000 |
3月31原装,微信报价 |
询价 | ||
ST |
04+ |
TO-247 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST意法半导体 |
22+21+ |
TO-247 |
3000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
ST |
23+ |
TO-3P |
12335 |
询价 | |||
ST |
1816+ |
TO-247 |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ST/意法 |
22+ |
TO-247 |
20855 |
询价 | |||
ST/意法半导体 |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ST |
23+ |
TO-3P |
65480 |
询价 | |||
ST |
20+ |
TO-3P |
25000 |
全新原装现货,假一赔十 |
询价 | ||
VBSEMI |
19+ |
TO-247 |
29600 |
绝对原装现货,价格优势! |
询价 |
