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AOP806

DualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP806usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. StandardProductAOP806isPb-free(meetsROHS&Sony259specifications). Features VDS(V)=75V

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

ASRD806

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ASI

Advanced Semiconductor, Inc

ASRD806

SURFACEMOUNTSTEPRECOVERYDIODE

ASI

Advanced Semiconductor, Inc

ASRD806D

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ASI

Advanced Semiconductor, Inc

ASRD806D-TR

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ASI

Advanced Semiconductor, Inc

ASRD806T

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ASI

Advanced Semiconductor, Inc

ASRD806-TR

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ASI

Advanced Semiconductor, Inc

ASRD806T-TR

SURFACEMOUNTSTEPRECOVERYDIODE

DESCRIPTION: TheASRD800SeriesofStepRecoveryDiodesareDesignedforSynthesiserandSamplerApplicationsRequiringaHighPerformancetoCostRatio. FEATURESINCLUDE: •TransitionTimeasLowas70pS •SurfaceMountSOD323Package

ASI

Advanced Semiconductor, Inc

ATTINY806

tinyAVR짰0-series

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

BAQ806

AMPINdiode

DESCRIPTION DO-214ACsurfacemountablepackagewithglasspassivatedchip.Thewell-definedvoid-freecaseisofatransfer-mouldedthermo-settingplastic. FEATURES •Glasspassivated •Highmaximumoperatingtemperature •Lowleakagecurrent •Excellentstability •UL94V-O

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC806

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC806_SER

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC806H

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •High-temperatureapplicationsupto175°C •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC806H_SER

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •High-temperatureapplicationsupto175°C •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC806W

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC806W_SER

80V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BF806

DiscreteSemiconductors

DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge

AMMSEMI

American Microsemiconductor

BR806

SiliconBridgeRectifiers

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

BR806

SILICONBRIDGERECTIFIERS

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

BR806

BridgeRectifier

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

产品属性

  • 产品编号:

    STTA806D

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 系列:

    TURBOSWITCH™

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    8A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-2

  • 供应商器件封装:

    TO-220AC

  • 工作温度 - 结:

    150°C(最大)

  • 描述:

    DIODE GEN PURP 600V 8A TO220AC

供应商型号品牌批号封装库存备注价格
ST
23+
TO220
6996
只做原装正品现货
询价
ST/意法
21+
TO-220
60000
原装正品进口现货
询价
ST
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
ST
06+
TO-220
12000
原装库存
询价
ST/进口原
17+
TO220-2
6200
询价
ST
2017+
TO220-2
58895
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
ST
17+
TO-220
1000
原装现货热卖
询价
ST
23+
TRANS
12335
询价
ST
16+
TO-220
10000
全新原装现货
询价
ST
1436+
TO-220
30000
绝对原装进口现货可开增值税发票
询价
更多STTA806D供应商 更新时间2024-5-26 14:24:00