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STP9NK80Z

N-CHANNEL 800V -0.9ohm - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB9NK80Z

Extremelyhighdv/dtcapability

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB9NK80Z

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF9NK80Z

N-CHANNEL800V-0.9ohm-7.5ATO-220/TO-220FPZener-ProtectedSuperMESHMOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    STP9NK80Z

  • 功能描述:

    MOSFET SUPERMESH™MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
22+
TO-220
7250
绝对原装现货,价格低,欢迎询购!
询价
ST
0615+
TO220F
2600
询价
STMicro.
23+
TO-220
7750
全新原装优势
询价
ST
17+
TO-220
1000
原装现货热卖
询价
ST
16+
08+
1
原装现货假一罚十
询价
ST
2015+
TO220A
12500
全新原装,现货库存长期供应
询价
ST
23+
TO-220
8795
询价
ST
17+
TO-220
6200
询价
ST全系列
22+23+
TO-220
26833
绝对原装正品全新进口深圳现货
询价
23+
N/A
38160
正品授权货源可靠
询价
更多STP9NK80Z供应商 更新时间2024-5-17 18:06:00