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STP55NF06

N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages

Description ThesePowerMOSFETshavebeendeveloped usingSTMicroelectronics’uniqueSTripFET process,whichisspecificallydesignedto minimizeinputcapacitanceandgatecharge.This rendersthedevicessuitableforuseasprimary switchinadvancedhigh-efficiencyisolatedDCDCconverter

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP55NF06

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D짼PAK STripFET??II POWER MOSFET

Description ThesePowerMOSFETshavebeendevelopedusingSTMicroelectronics’uniqueSTripFETprocess,whichisspecificallydesignedtominimizeinputcapacitanceandgatecharge.Thisrendersthedevicessuitableforuseasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersfo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP55NF06

N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP55NF06

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STP55NF06FP

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D짼PAK STripFET??II POWER MOSFET

Description ThesePowerMOSFETshavebeendevelopedusingSTMicroelectronics’uniqueSTripFETprocess,whichisspecificallydesignedtominimizeinputcapacitanceandgatecharge.Thisrendersthedevicessuitableforuseasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersfo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP55NF06L

N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP55NF06LFP

N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET?줚I POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP55NF06FP

N-channel 60V - 0.015廓 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP55NF06FP

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

STP55NF06L

N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP55NF06L

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STP55NF06L_06

N-channel 60V - 0.014廓 - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

55NF06

N-channel60V,0.015Ω,50ASTripFET™IIPowerMOSFETinD²PAK,TO-220andTO-220FPpackages

Description ThesePowerMOSFETshavebeendeveloped usingSTMicroelectronics’uniqueSTripFET process,whichisspecificallydesignedto minimizeinputcapacitanceandgatecharge.This rendersthedevicessuitableforuseasprimary switchinadvancedhigh-efficiencyisolatedDCDCconverter

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

B55NF06

N-channel60V-0.014廓-55ATO-220/D2PAK/I2PAKSTripFET??IIPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

B55NF06

N-channel60V-0.015廓-50A-D2PAK/I2PAK/TO-220/TO-220FPSTripFET??IIPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

D55NF06

N-CHANNELPOWERMOSFETTRANSISTOR

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

F55NF06

N-CHANNELPOWERMOSFETTRANSISTOR

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

P55NF06

N-CHANNELPOWERMOSFETTRANSISTOR

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

P55NF06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

P55NF06

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V APPLICATIONS ·AuotmobileConvertSystem ·NetworkingDC-DCPowerSystem

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    STP55NF06

  • 功能描述:

    MOSFET N-Ch 60 Volt 55 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
2020+
TO220
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ST
16+/17+
TO-220
3500
原装正品现货供应56
询价
ST
16+
DIP
103
原装进口现货,假一罚十
询价
ST
22+
TO220
15000
专注原装正品!现货库存!价格优势!
询价
ST
23+
TO-220
65400
询价
ST
14+无铅
TO-220
25700
优势产品,博盛微热卖!!!
询价
STM
20+
TO-220
50000
询价
ST
21+
TO-220
5953
专营原装正品现货,当天发货,可开发票!
询价
ST/意法
21+
TO-220
2000
原装现货假一罚十
询价
ST/意法
22+
TO-220-3
37720
原厂原装现货
询价
更多STP55NF06供应商 更新时间2024-6-11 15:26:00