STP4NC80Z中文资料PDF规格书
STP4NC80Z规格书详情
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 2.4 Ω
■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO-SOURCE ZENER DIODES
■ 100 AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
产品属性
- 型号：
STP4NC80Z
- 功能描述：
MOSFET TO-220AB
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
05+ |
TO-220F |
1590 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST品牌 |
2016+ |
TO-220F |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
ST |
23+ |
TO-220 |
8795 |
询价 | |||
ST/意法 |
23+ |
TO-220 |
90000 |
只做原装 全系列供应 价格优势 可开增票 |
询价 | ||
ST |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
ST |
17+ |
TO-220 |
2500 |
原装现货热卖 |
询价 | ||
ST |
20+ |
TO-220F |
25000 |
全新原装现货,假一赔十 |
询价 | ||
ST/意法 |
2022 |
TO-220F |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ST/意法 |
TO-220F |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
