首页 >STP4NC60FP>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STP4NC60FP | N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS(on)= | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-1.8ohm-4.2AD2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS(on)= | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-1.8ohm-4.2ATO-220/TO-220FP/I2PAKPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gate chargeandruggedness. ■TYPICALRDS(on)= | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Advancedplanarprocess | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC |
详细参数
- 型号：
STP4NC60FP
- 制造商：
STMICROELECTRONICS
- 制造商全称：
STMicroelectronics
- 功能描述：
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2016+ |
TO-220F |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ST/进口原 |
17+ |
TO-220F |
6200 |
询价 | |||
ST |
2016+ |
TO-220F |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
STM |
2020+ |
TO-220 |
1000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ST |
17+ |
TO-220F |
2500 |
原装现货热卖 |
询价 | ||
ST |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
ST |
23+ |
TO-220F |
8795 |
询价 | |||
ST |
22+ |
TO-220F |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
ST |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
询价 | ||
ST |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 |
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