首页 >STP4N100FI>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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STP4N100FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=3.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEED | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
null4.0A,1000VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC4N100-FCprovideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdevice suitableforuseasaloadswitchorinPWMapplications. FEATURES0 *RDS(ON)≤6.0Ω@VGS=10V,ID=2.0A *LowReverseTransferCapacitance *FastSwitchingCapabi | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQ g process •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •Ratedforunclamped | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Eas | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Eas | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits.. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHiperFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiperFETPowerMOSFETsQ-Class | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQ g process •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •Ratedforunclamped | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETQ-Class | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackside) Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号:
STP4N100FI
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220F |
8795 |
询价 | |||
ST |
N/A |
2510 |
询价 | ||||
ST |
17+ |
TO-220F |
6200 |
询价 | |||
ST |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
ST |
17+ |
TO-220F |
2500 |
原装现货热卖 |
询价 | ||
ST全系列 |
22+23+ |
TO-220F |
26513 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
ST |
2019 |
NA |
55000 |
专营原装正品现货 |
询价 | ||
ST |
2021+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
ST |
2021+ |
TO-220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
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