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STL12N65M5

Very low intrinsic capacitance

Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedam

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD12N65M5

N-channel650V,0.39Ohm,8.5AMDmeshVPowerMOSFETDPAK,I2PAK,TO-220FP,TO-220,IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD12N65M5

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF12N65M5

N-channel650V,0.39Ohm,8.5AMDmeshVPowerMOSFETDPAK,I2PAK,TO-220FP,TO-220,IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF12N65M5

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI12N65M5

N-channel650V,0.39Ohm,8.5AMDmeshVPowerMOSFETDPAK,I2PAK,TO-220FP,TO-220,IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STI12N65M5

iscN-ChannelMosfetTransistor

•FEATURES •DrainCurrentID=8.5A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP12N65M5

N-channel650V,0.39Ohm,8.5AMDmeshVPowerMOSFETDPAK,I2PAK,TO-220FP,TO-220,IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP12N65M5

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP12N65M5

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STU12N65M5

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STU12N65M5

N-channel650V,0.39Ohm,8.5AMDmeshVPowerMOSFETDPAK,I2PAK,TO-220FP,TO-220,IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    STL12N65M5

  • 制造商:

    STMicroelectronics

  • 功能描述:

    POWER MOSFET - Tape and Reel

  • 功能描述:

    POWER MOSFET - Cut TR(SOS)

  • 功能描述:

    MOSF N CH 650V 8.5A PWRFLT 5X6HV

  • 功能描述:

    MOSFET N-CH 650V 8.5A PWRFLT 5X6

  • 功能描述:

    STL12N65M5 Series 650 V 8.5 A 0.53 Ohm N-channel Power MOSFET - PowerFLAT 5x6 HV

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
22+
SOP-8
10000
公司原装现货,欢迎咨询
询价
STMicroelectronics
10265
提供BOM表配单只做原装货值得信赖
询价
ST
15+
3000
向鸿原装正品/代理渠道/现货优势
询价
STM
2020+
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
STMicroelectronics
21+
PowerFlat?(5x6)
3000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
STM原厂目录
23+
PowerFLAT8x8
28500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
STM
1809+
DFN-8
1675
就找我吧!--邀您体验愉快问购元件!
询价
ST/意法
DFN5X6
265209
假一罚十,原包原标签,常备现货
询价
STMicroelectronics
22+
28600
只做原装正品现货假一赔十一级代理
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
更多STL12N65M5供应商 更新时间2024-5-28 21:36:00