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STF19NM65N中文资料PDF规格书
STF19NM65N规格书详情
Description
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号:
STF19NM65N
- 功能描述:
MOSFET N-Channel 650V 0.25 Ohms 15.5A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO220F |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
23+ |
TOTO-220ISOF |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
Toohong |
24+ |
TO-220F |
11000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
ST |
2020+ |
TO-220F |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
Toohong |
2023+ |
TO-220F |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
ST |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST/韩国太虹 |
TO-220F |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
ST/意法 |
22+ |
TO220ISOFULLPACK |
100070 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ST |
23+ |
TO2203 |
8000 |
只做原装现货 |
询价 | ||
ST/韩国太虹 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 |