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9N60M2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STD9N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF9N60M2

N-channel600V,0.72??typ.,5.5AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220FPandI2PAKFPpackages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STFI9N60M2

N-channel600V,0.72??typ.,5.5AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220FPandI2PAKFPpackages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STL9N60M2

N-channel600V,0.76??typ.,4.8AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage

Description ThisdeviceisanN-channelPowerMOSFET developedusinganewgenerationofMDmesh™ technology:MDmeshIIPlus™lowQg.This revolutionaryPowerMOSFETassociatesa verticalstructuretothecompany'sstriplayoutto yieldoneoftheworld'sloweston-resistanceand gatecharge

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP9N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP9N60M2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STU9N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
ST/意法
23+
SOT252
90000
只做原厂渠道价格优势可提供技术支持
询价
ST/意法
21+
SOT252
20000
优势供应 实单必成 可开增值税13点
询价
ST/意法
22+
SOT252
10000
公司原装现货,欢迎咨询
询价
ST/意法
23+
SOT252
5000
原装正品实单必成
询价
ST/意法
21+
TO-252
50000
终端可免费提供样品,欢迎咨询
询价
ST/意法
23+
TO-252
50000
全新原装正品现货,支持订货
询价
ST/意法
TO252
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
询价
ST(意法半导体)
23+
TO252
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
ST
156
只做正品
询价
ST(意法半导体)
23+
TO252
6000
询价
更多STD9N60M2-CUTTAPE供应商 更新时间2024-5-18 8:48:00