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STD11NM60ND中文资料PDF规格书
STD11NM60ND规格书详情
Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Features
■ The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
产品属性
- 型号：
STD11NM60ND
- 功能描述：
MOSFET N-channel 600V, 10A FDMesh II
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
TO-252-3 |
8800 |
公司只做原装正品 |
询价 | ||
ST(意法) |
22+ |
BGA-100 |
6800 |
询价 | |||
ST/意法 |
23+ |
NA/ |
20 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
2018+ |
TO252 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
ST/意法半导体 |
23+ |
TO-252-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
23+ |
TO252DPAK |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ST/意法半导体 |
22+ |
TO-252-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
STMicroelectronics Asia Pacifi |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
STM |
23+ |
NA |
5556 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8860 |
原装现货,实单价优 |
询价 |
