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STB24NM60N中文资料意法半导体数据手册PDF规格书
STB24NM60N规格书详情
Description
These N-channel 600 V Power MOSFET devices
are made using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a new vertical structure to
the company’s strip layout to yield one of the
world’s lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converter.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
产品属性
- 型号:
STB24NM60N
- 功能描述:
MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
D2PAK(TO-263) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
ST/意法半导体 |
2023+ |
TO-263-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
23+ |
NA/ |
3550 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
23+ |
SOT-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ST/意法 |
22+ |
SOT-263 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
ST |
2023 |
TO-263-3 (D2PAK) |
3856 |
原厂代理渠道,正品保障 |
询价 | ||
STMicroelectronics Asia Pacifi |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
12820 |
正规渠道,只有原装! |
询价 |