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STB14NM65N中文资料PDF规格书
STB14NM65N规格书详情
Description
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号:
STB14NM65N
- 功能描述:
MOSFET N-Channel 650V 0.33 Ohms 12A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST/意法 |
24+ |
TO263 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
STMicro. |
23+ |
D2PAK |
7750 |
全新原装优势 |
询价 | ||
ST/意法 |
23+ |
D2PAK |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ST |
原厂原封 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST/意法 |
2022 |
TO263 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ST |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
63880 |
本公司只售原装 支持实单 |
询价 | ||
ST-意法半导体 |
24+25+/26+27+ |
TO-263-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ST |
17+ |
D2PAK |
6200 |
询价 | |||
ST/意法 |
22+ |
N |
12800 |
本公司只做进口原装!优势低价出售! |
询价 |