零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SSU04N65 | N-Ch Enhancement Mode Power MOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | |
SSU04N65 | N-Channel 650 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | |
N-Ch Enhancement Mode Power MOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
MOSFET650V,4AN-CHANNEL FEATURE •RDS(ON),typ.=2.1Ω@VGS=10V •HighCurrentRating •LowerCapacitance •LowerTotalGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM04N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower | AITSEMIAiT Semiconductor Inc. 創瑞科技AiT創瑞科技 | AITSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,3.2A,RDS(ON)=2.8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelPowerMOSFET | ZPSEMI ZP Semiconductor | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VB |
2019 |
TO-263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
S |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
S |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
SECOS |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
MITSUMI |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
MITSUMI |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
MITSUMI |
21+ |
SMD |
10000 |
原装现货假一罚十 |
询价 | ||
MITSUMI |
2022 |
SMD |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
MITSUMI |
SMD |
35560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
MITSUMI |
24+23+ |
SMD |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 |
相关规格书
更多- SSU04N65_15
- SSU07N65SL
- SSU10N20-C
- SSU-121ART
- SSU-131MAT
- SSU14
- SSU1N50A
- SSU1N50B
- SSU1N60B
- SSU210
- SSU24S
- SSU2N60A
- SSU2N80A
- SSU2N90A
- SSU3055A
- SSU3N80A
- SSU40N01
- SSU4N60A
- SSU4N60B
- SSU50N10
- SSU90N04-02B
- SSUM10060
- SSUM30120
- SSUR70120
- SSUR7140
- SSURHD8560T4G-VF01
- SSURHD8560W1T4G
- SSV120-10
- SSV120-8
- SSV66A000SM16
- SSV66A141S1GP
- SSV66A-1G
- SSV66A24A813E34N183
- SSV66A24E34N183
- SSV66A-34N
- SSV66A35B135SM16
- SSV66A35B160SM16
- SSV66A35B185SM16
- SSV66A35B210SM16
- SSV66A35B235SM16
- SSV66A35B85SM16
- SSV66A813E34N183
- SSV66A84E34NP
- SSV66-SM16
- SSVD5804NT4G
相关库存
更多- SSU07N65SL
- SSU07N65SL_15
- SSU11
- SSU-121BRT
- SSU13S
- SSU17
- SSU1N50A
- SSU1N60A
- SSU1N60B
- SSU24
- SSU2N60A
- SSU2N60B
- SSU2N80A
- SSU3055A
- SSU3055LA
- SSU3N90A
- SSU4N60
- SSU4N60B
- SSU4N60B
- SSU50N10_15
- SSU90N04-02B_15
- SSUM300120
- SSUM75120
- SSUR71
- SSUR7160
- SSURHD8560W1T4G
- SSV
- SSV120-6
- SSV1BAW56LT1G
- SSV66A100E1GP
- SSV66A150E1GP
- SSV66A200E1GP
- SSV66A24A813E34NP
- SSV66A24E34NP
- SSV66A35B110SM16
- SSV66A35B135SPM12
- SSV66A35B160SPM12
- SSV66A35B185SPM12
- SSV66A35B210SPM12
- SSV66A35B235SPM12
- SSV66A35B85SPM12
- SSV66A813E34NP
- SSV66-S1G
- SSV66-SPM12
- SSW