Features

• Organized as 4M x16

• Single Voltage Read and Write Operations

– 2.7-3.6V

• Superior Reliability

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

• Low Power Consumption (typical values at 5 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 μA (typical)

– Auto Low Power Mode: 3 μA (typical)

• Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 32 KWord)

for SST39VF6402B

– Bottom Block-Protection (bottom 32 KWord)

for SST39VF6401B

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Security-ID Feature

– Microchip: 128 bits; User: 128 bits

• Fast Read Access Time:

– 70 ns

• Latched Address and Data

• Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 μs (typical)

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bits

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pin Assignments

– Software command sequence compatibility

- Address format is 11 bits, A10-A0

- Block-Erase 6th Bus Write Cycle is 30H

- Sector-Erase 6th Bus Write Cycle is 50H

• Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (8mm x 10mm)

• All devices are RoHS compliant

SST39VF6402B-70-4I-EKE属于集成电路（IC） > 存储器。微芯科技股份有限公司制造生产的SST39VF6402B-70-4I-EKE存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。