首页>SST36VF1602G-70-4I-L1PE>规格书详情
SST36VF1602G-70-4I-L1PE中文资料PDF规格书
相关芯片规格书
更多- SST36VF1602E-70-4C-B3KE
- SST36VF1602E-70-4I-B3KE
- SST36VF1602E-70-4I-EKE
- SST36VF1602C-70-4I-B3KE
- SST36VF1602C
- SST36VF1602C-70-4C-B3KE
- SST36VF1602C-70-4C-EKE
- SST36VF1602E-70-4C-EKE
- SST36VF1601G-70-4I-L1PE
- SST36VF1602G-70-4I-B3KE
- SST36VF1602-70-4E-EK
- SST36VF1602G-70-4I-EKE
- SST36VF1602G-70-4C-B3KE
- SST36VF1602-70-4E-BK
- SST36VF1602-70-4C-EK
- SST36VF1602-90-4C-EK
- SST36VF1602-90-4C-BK
- SST36VF1602-90-4E-EK
SST36VF1602G-70-4I-L1PE规格书详情
PRODUCT DESCRIPTION
The SST36VF1601G and SST36VF1602G are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.
FEATURES:
• Organized as 1M x16 or 2M x8
• Dual Bank Architecture for Concurrent
Read/Write Operation
– 16 Mbit Bottom Sector Protection
- SST36VF1601G: 4 Mbit + 12 Mbit
– 16 Mbit Top Sector Protection
- SST36VF1602G: 12 Mbit + 4 Mbit
• Single 2.7-3.6V for Read and Write Operations
• Superior Reliability
– Endurance: 100,000 cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 6 mA typical
– Standby Current: 4 µA typical
– Auto Low Power Mode: 4 µA typical
• Hardware Sector Protection/WP# Input Pin
– Protects the 4 outermost sectors (8 KWord)
in the smaller bank by driving WP# low and
unprotects by driving WP# high
• Hardware Reset Pin (RST#)
– Resets the internal state machine to reading
array data
• Byte# Pin
– Selects 8-bit or 16-bit mode
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Chip-Erase Capability
• Block-Erase Capability
– Uniform 32 KWord blocks
• Erase-Suspend / Erase-Resume Capabilities
• Security ID Feature
– SST: 128 bits
– User: 256 Byte
• Fast Read Access Time
– 70 ns
• Latched Address and Data
• Fast Erase and Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Program Time: 7 µs
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory Interface (CFI)
• JEDEC Standards
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-lead TSOP (12mm x 20mm)
– 56-ball LFBGA (8mm x 10mm)
• All non-Pb (lead-free) devices are RoHS compliant
产品属性
- 型号:
SST36VF1602G-70-4I-L1PE
- 制造商:
SST
- 制造商全称:
Silicon Storage Technology, Inc
- 功能描述:
16 Mbit(x8/x16) Concurrent SuperFlash
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SST |
0831+ |
TSOP |
1920 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SST |
23+ |
TSOP48 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
GS |
TSOP48 |
125000 |
一级代理原装正品,价格优势,长期供应! |
询价 | |||
SST |
TSOP |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
SST |
2022 |
TSOP |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
SST |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
SST |
TSOP |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
SST |
2022 |
TSOP48 |
5280 |
原厂原装正品,价格超越代理 |
询价 | ||
SST |
22+ |
TSOP-54 |
8000 |
原装现货库存.价格优势 |
询价 | ||
GS |
23+ |
TSOP48 |
2880 |
原厂原装正品 |
询价 |