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SST28VF040A-90-4C-WH中文资料PDF规格书

SST28VF040A-90-4C-WH
厂商型号

SST28VF040A-90-4C-WH

功能描述

4 Mbit (512K x8) SuperFlash EEPROM

文件大小

323.43 Kbytes

页面数量

24

生产厂商 Silicon Storage Technology,Inc.
企业简称

SST

中文名称

Silicon Storage Technology,Inc.官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-14 19:00:00

SST28VF040A-90-4C-WH规格书详情

PRODUCT DESCRIPTION

The SST28SF/VF040A are 512K x8 bit CMOS Sector Erase, Byte-Program EEPROMs. The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF/VF040A erase and program with a single power supply. The SST28SF/ VF040A conform to JEDEC standard pinouts for byte wide memories and are compatible with existing industry standard flash EEPROM pinouts.

Featuring high performance programming, the SST28SF/VF040A typically Byte-Program in 35 µs. The SST28SF/VF040A typically Sector-Erase in 2 ms. Both Program and Erase times can be optimized using interface features such as Toggle bit or Data# Polling to indicate the completion of the Write cycle. To protect against an inadvertent write, the SST28SF/VF040A have on chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST28SF/VF040A are offered with a guaranteed sector endurance of 10,000 cycles. Data retention is rated greater than 100 years.

FEATURES:

• Single Voltage Read and Write Operations

– 5.0V-only for SST28SF040A

– 2.7-3.6V for SST28VF040A

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Memory Organization: 512K x8

• Sector-Erase Capability: 256 Bytes per Sector

• Low Power Consumption

– Active Current: 15 mA (typical) for 5.0V and

10 mA (typical) for 2.7-3.6V

– Standby Current: 5 µA (typical)

• Fast Sector-Erase/Byte-Program Operation

– Byte-Program Time: 35 µs (typical)

– Sector-Erase Time: 2 ms (typical)

– Complete Memory Rewrite: 20 sec (typical)

• Fast Read Access Time

– 5.0V-only operation: 90 and 120 ns

– 2.7-3.6V operation: 150 and 200 ns

• Latched Address and Data

• Hardware and Software Data Protection

– 7-Read-Cycle-Sequence Software Data

Protection

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm and 8mm x 20mm)

– 32-pin PDIP

供应商 型号 品牌 批号 封装 库存 备注 价格
SST
23+
TSOP
20000
原厂原装正品现货
询价
ROHM
2020+
SOT23
35000
100%进口原装正品公司现货库存
询价
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
ROHM
23+
SOT-23
30000
全新原装正品
询价
SST
23+
SOT-23
1800
大批量供应优势库存热卖
询价
ROHM
23+
SOT23
5000
原装正品,假一罚十
询价
SST
2023+
TSOP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
SST
2018+
SMD
20000
一级代理原装现货假一罚十
询价
SST
22+
TSSOP
3000
原装正品,支持实单
询价
ROHM
1741+
SOT23
6528
只做进口原装正品假一赔十!
询价