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SPP08N80C3

N-Channel MOSFET Transistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP08N80C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP08N80C3

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP08N80C3

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP08N80C3_08

CoolMOSTM Power Transistor Features New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP08N80C3_11

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

08N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

ISPP08N80C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA08N80C3

CoolMOSTMPowerTransistorFeaturesExtremedv/dtratedHighpeakcurrentcapability

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA08N80C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA08N80C3

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA08N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI08N80C3

iscN-ChannelMOSFETTransistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPI08N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    SPP08N80C3

  • 功能描述:

    MOSFET COOL MOS N-CH 800V 8A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON
24+
TO-220
5000
进口原装现货
询价
INFINEON/英飞凌
2021+
TO-220
17462
原装进口假一罚十
询价
INFINEON
23+
TO220
6996
只做原装正品现货
询价
Infineon(英飞凌)
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INFINEON
22+
TO-220
6600
原装正品 现货 真诚出货
询价
Infineon(英飞凌)
2023+
TO-220(TO-220-3)
4550
全新原装正品
询价
Infineon(英飞凌)
23+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
原装
24+
标准
40528
热卖原装进口
询价
Infineon
17+
TO-220
6200
询价
Infineon
23+
TO-220AB
7750
全新原装优势
询价
更多SPP08N80C3供应商 更新时间2024-9-20 10:50:00