SPB20N60C3MOS资料datasheet下载原装现货-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
20N60C3	文件：314.6 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
G20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N60C3	文件：153.1 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG20N60C3D	文件：123.08 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG20N60C3D	文件：82.71 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG20N60C3R	文件：107.72 Kbytes Page：6 Pages	40A,600V,RuggedUFSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP20N60C3	文件：144.01 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP20N60C3	文件：81.67 Kbytes Page：7 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP20N60C3	文件：153.1 Kbytes Page：8 Pages	45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP20N60C3R	文件：107.72 Kbytes Page：6 Pages	40A,600V,RuggedUFSSeriesN-ChannelIGBTs	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
ISPP20N60C3	文件：339.04 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perfor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
ISPW20N60C3	文件：335.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA20N60C3	文件：313.83 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA20N60C3	文件：314.6 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA20N60C3	文件：1.83839 Mbytes Page：15 Pages	NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB20N60C3	文件：314.6 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB20N60C3	文件：1.06347 Mbytes Page：13 Pages	CoolMOSPowerTransistorFeaturenewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特莱科技有限公司	SPB20N60C3MOS	INFINEON/英飞凌	21+23+	SOT-263	7500	16年电子元件现货供应商终端BOM表可配单提供样品	询价
深圳兆威电子有限公司	SPB20N60C3MOS(场效应管)	INFINEON/英飞凌	23+	PG-TO263-3D2PAK(TO	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市仟禧电子有限公司	SPB20N60C3MOS(场效应管)	INFINEON/英飞凌	22+	SOT-263	20000	保证原装正品,假一陪十	询价
深圳市威尔健半导体有限公司	SPB20N60C3MOS(场效应管)	INFINEON/英飞凌	23+	TO-263	50000	全新原装正品现货,支持订货	询价
深圳市创盛芯科技有限公司	SPB20N60C3MOS(场效应管)	INFINEON/英飞凌	22+	TO-263	3750	原装现货假一赔十	询价
深圳廊盛科技有限公司	SPB20N60C3MOS(场效应管)	INFINEON/英飞凌	2022	TO-263	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市科恒伟业电子有限公司	SPB20N60C3MOS(场效应管)	INFINEON/英飞凌	21+	TO-263	9852	只做原装正品现货!或订货假一赔十!	询价
深圳市科芯源微电子有限公司	SPB20N60C3MOS(场效应管)	INFINEON/英飞凌	24+	TO263	58000	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市安富世纪电子有限公司	SPB20N60C5	INENOI	21+	SOT263	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	SPB20N60C5	INFINEON	SOT263	22+	6000	十年配单,只做原装	询价

更多SPB20N60C3MOS供应商更新时间2024-6-1 10:36:00

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