| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SPB | ADSL MODEM?갌AX?갩ELEPHONE | SPSEMIStarHope 瞬雷电子 | SPSEMI | |
10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY FEATURES: •DesignedforSpaceUseonFlexibleSolarPannels •HermeticallySealed. •WideTemperatureRange:-100to+150oC •QualifiedDesignto20,000TemperatureCycles •FlexibleLeads-WeldedorSolderedTermination •LargeRadiationSurfaceforOperationwithoutHeatsink | SSDI SSDI | SSDI | ||
Cool MOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Cool MOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel 650V (D-S) Power MOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
High Power Factor LED Replacement T8 Fluorescent Tube Introduction ThisapplicationnotedescribestheprinciplesanddesignequationsrequiredforthedesignofahighbrightnessLEDlampusingtheAL9910.Theequationsarethenusedtodemonstratethedesignofauniversal,offline,highpowerfactor(PF),13WLEDlampsuitableforuseasthere | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
SPB
- 制造商：
STIG RAVN
- 功能描述：
DRAWER UNIT BLUE
- 功能描述：
DRAWER UNIT, BLUE
- 功能描述：
DRAWER UNIT, BLUE, Cabinet
- Style：
Drawer, Cabinet
- Material：
-, External Height -
- Imperial：
11.81", External Height -
- Metric：
300mm, External Width -
- Metric：
273mm, External Depth -
- Metric：
251mm,
- Colour：
Blue, External
- Depth：
251mm, External, RoHS
- Compliant：
NA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
22+ |
TO-263 |
16694 |
原装正品现货,可开13点税 |
询价 | ||
JST |
2332+ |
220083 |
一级代理,原装正品! |
询价 | |||
INFINEON |
10+ |
TO263-7 |
7800 |
全新原装正品,现货销售 |
询价 | ||
inf进口原 |
19+ |
TO-263 |
30980 |
原装现货/放心购买 |
询价 | ||
INFINEON |
20+ |
D2PAK |
3862 |
原装正品现货 |
询价 | ||
模块 |
256 |
原装 原装 原装 只做原装现货 |
询价 | ||||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
询价 | ||
Infineon |
2020 |
N/A |
4890 |
询价 | |||
INFINEON/英飞凌 |
NA |
8600 |
原装正品,欢迎来电咨询! |
询价 | |||
TI |
20+ |
TQFP128 |
500 |
样品可出,优势库存欢迎实单 |
询价 |
相关规格书
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相关库存
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- SPC_040
- SPC_125
- SPC00441A005100M
- SPC00447A002100M
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- SPC02SYAN
- SPC10067
- SPC10502
- SPC10570
- SPC10578
- SPC10803
- SPC11099
- SPC11102
