| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CMOS14-STAGERipple-CarryBinaryCounter/DividerandOscillator | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
CMOS14-STAGERipple-CarryBinaryCounter/DividerandOscillator | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
CMOS14-StageRipple-CarryBinaryCounter/DividerandOscilliator | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
CMOS14-StageRipple-CarryBinaryCounter/DividerandOscilliator | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
CMOS14-STAGERipple-CarryBinaryCounter/DividerandOscillator | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES •60V,15A,RDS(ON)=85mΩ@VGS=10V. •SuperhighdensecelldesignforextremelylowRDS(ON) •Highpowerandcurrenthandlingcapability. •TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=75mΩ@VGS=10V. RDS(ON)=90mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,17A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,17A,RDS(ON)=75mW@VGS=10V. RDS(ON)=90mW@VGS=5.0V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=75mΩ@VGS=10V. RDS(ON)=90mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES •60V,15A,RDS(ON)=85mΩ@VGS=10V. •SuperhighdensecelldesignforextremelylowRDS(ON) •Highpowerandcurrenthandlingcapability. •TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,15A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=100mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,15A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,15A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,16A,RDS(ON)=75mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=90mW@VGS=5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAGE millimeter |
23+ |
模块 |
400 |
询价 | |||
FISCHER |
24+25+/26+27+ |
TO-220-3 |
13788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
SEMIKRON |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
询价 | ||
SEMIKRON |
2023+ |
module |
48000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
SEMIKRON(赛米控) |
23+ |
MODULE |
1500 |
SEMIKRON(赛米控)系列模块在售 |
询价 | ||
赛米控|Semikron |
21+ |
模块 |
12588 |
原装正品,一级品牌代理 |
询价 | ||
SEMIKRON |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
询价 | ||
SEMIKRON |
2018+ |
module |
6000 |
全新原装正品现货,假一赔佰 |
询价 | ||
SEMIKRON |
18+ |
MODULE |
2173 |
公司大量全新正品 随时可以发货 |
询价 | ||
SEMIKRON/赛米控 |
23+ |
MODULE |
10880 |
原装正品，支持实单 |
询价 |
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