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SIHG22N60E

E Series Power MOSFET

VishayVishay Siliconix

威世科技

SIHG22N60E

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHG22N60E

E Series Power MOSFET

VishayVishay Siliconix

威世科技

SIHG22N60EL

EL Series Power MOSFETs

FEATURES •Reducedfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Lowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Se

VishayVishay Siliconix

威世科技

SIHG22N60E_13

E Series Power MOSFET

VishayVishay Siliconix

威世科技

SIHG22N60E_V01

E Series Power MOSFET

VishayVishay Siliconix

威世科技

SiHG22N60E-E3

E Series Power MOSFET

VishayVishay Siliconix

威世科技

SIHG22N60E-E3

E Series Power MOSFET

VishayVishay Siliconix

威世科技

SIHG22N60EF

EF Series Power MOSFET With Fast Body Diode

VishayVishay Siliconix

威世科技

SIHG22N60EF-GE3

EF Series Power MOSFET With Fast Body Diode

VishayVishay Siliconix

威世科技

SIHG22N60E-GE3

E Series Power MOSFET

VishayVishay Siliconix

威世科技

SiHG22N60E-GE3

E Series Power MOSFET

VishayVishay Siliconix

威世科技

SIHG22N60E-GE3

E Series Power MOSFET

VishayVishay Siliconix

威世科技

SIHG22N60EL

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

22N60

HEXFETPOWERMOSFET

DESCRIPTION AstheSMPSMOSFET,theUTC22N60usesUTC’sadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=0.35Ω *UltraLowGateCharge

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

22N60

22A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

ET-22N60

N-ChannelMOSFET

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

FCA22N60N

N-ChannelMOSFET600V,22A,0.165W

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FCA22N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=165mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FCH22N60N

UltraLowGateCharge(Typ.Qg=45nC),LowEffectiveOutputCapacitance(Typ.Coss.eff=196.4pF)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    SIHG22N60E

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    E Series Power MOSFET

供应商型号品牌批号封装库存备注价格
VISHAY/威世
2024+实力库存
TO-247
17
只做原厂渠道 可追溯货源
询价
VISHAY
22+
TO-247
10
长源创新-只做原装---假一赔十
询价
VISHAY
22+23+
TO-247
27122
绝对原装正品全新进口深圳现货
询价
VISHAY原装
19+
TO-247
9860
一级代理
询价
VISHAY
1746+
TO247
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
VISHAY/威世
2022+
17
全新原装 货期两周
询价
VISHAY/威世
23+
TO-247
30000
全新原装现货,价格优势
询价
VISHAY/威世
22+
TO-247
5623
只做原装正品现货!或订货假一赔十!
询价
VISHAY/威世
21+
TO-247
50000
终端可免费提供样品,欢迎咨询
询价
VISHAY/威世
22+
TO-247
360000
进口原装房间现货实库实数
询价
更多SIHG22N60E供应商 更新时间2024-6-4 16:36:00