SIGC15T60UN

High Speed IGBT Chip in NPT-technology positive temperature coefficient

G15T60

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

K15T60

LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

Features: •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime5s •TRENCHSTOP™andFieldstoptechnologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhigh

SIGC15T60

IGBT3Chip

SIGC15T60E

TRENCHSTOPTMIGBT3Chip

Features: 600Vtrench&fieldstoptechnology LowVCEsat Lowturn-offlosses Shorttailcurrent Positivetemperaturecoefficient Easyparalleling

SIGC15T60S

IGBT3Chip600VTrench&FieldStoptechnologypositivetemperaturecoefficient

SIGC15T60SE

600Vtrench&fieldstoptechnology