首页 >SI7726DN>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

SI7726DN

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES •Halogen-free •SkyFETMonolithicTrenchFET®Power MOSFETandSchottkyDiode •LowThermalResistancePowerPAK® PackagewithSmallSizeandLow1.07mmProfile •100RgTested APPLICATIONS •DC/DCConverter -Notebook -POL

VishayVishay Siliconix

威世科技

SI7726DN

N-Channel 30-V (D-S) MOSFET with Schottky Diode

VishayVishay Siliconix

威世科技

SI7726DN_V01

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES •Halogen-free •SkyFETMonolithicTrenchFET®Power MOSFETandSchottkyDiode •LowThermalResistancePowerPAK® PackagewithSmallSizeandLow1.07mmProfile •100RgTested APPLICATIONS •DC/DCConverter -Notebook -POL

VishayVishay Siliconix

威世科技

BA7726

AnalogcompanderwithvocalfaderforKARAOKE

TheBA7726ASandBA7726AFSareanalogcompandersforkaraokeechosystemsandhaveinternallogarithmiccompressionandexpansioncircuits,astereolinemixeramplifier,vocalfaderfunction,vocaldetectionfunction,microphoneALC,microphoneON/OFFswitch,andoutputswitch.Whenusedtogeth

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BA7726AFS

AnalogcompanderwithvocalfaderforKARAOKE

TheBA7726ASandBA7726AFSareanalogcompandersforkaraokeechosystemsandhaveinternallogarithmiccompressionandexpansioncircuits,astereolinemixeramplifier,vocalfaderfunction,vocaldetectionfunction,microphoneALC,microphoneON/OFFswitch,andoutputswitch.Whenusedtogeth

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BA7726AS

AnalogcompanderwithvocalfaderforKARAOKE

TheBA7726ASandBA7726AFSareanalogcompandersforkaraokeechosystemsandhaveinternallogarithmiccompressionandexpansioncircuits,astereolinemixeramplifier,vocalfaderfunction,vocaldetectionfunction,microphoneALC,microphoneON/OFFswitch,andoutputswitch.Whenusedtogeth

ROHMRohm Semiconductor

罗姆罗姆半导体集团

CV7726

BipolarNPNDevice

SEME-LAB

Seme LAB

FA7726

45VInputBuckConverter3ch/2chICwithPowerMOSFET

FujiFUJI CORPORATION

株式会社FUJI

IRF7726

PowerMOSFET(Vdss=-30V)

Description HEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanex

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7726PBF

HEXFETPowerMOSFET

Description HEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanex

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7726PBF

UltraLowOn-Resistance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF7726TR

UltraLowOn-Resistance

Description HEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesign,thatInternationalRectifieriswellknownfor,providesthedesignerwithanex

IRFInternational Rectifier

英飞凌英飞凌科技公司

L7726

RedLEDforopticallinkEmitterfor156MbpsPOFcommunications

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

L7726

Emitter/receiverfor156MbpsPOFcommunications

L7726andS7726aredesignedforhigh-speedPOF(PlasticOpticalFiber)communications.Bothdevicesaremoldedintominiatureplasticpackageswithlenses,allowingeasyandefficientcouplingtoaPOF.S7727usesamonolithicphotoICthatensureshighresistancetoexternalnoiseandhighrelia

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

NCV7726A

Half-BridgeDriver

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV7726B

Half-BridgeDriver

ONSEMION Semiconductor

安森美半导体安森美半导体公司

PFS7726H

PFCControllerwithIntegrated600VMOSFETandDiodeOptionOptimizedforHighPFandEfficiencyAcrossLoadRange

KeyBenefits •Highefficiencyandpowerfactoracrossloadrange •>95efficiencyfrom10loadto100load •0.95achievableat20loadforHandLpackages •ProgrammablePowerGood(PG)signal •Digitallinepeakdetectionforrobustperformance

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

TCS7726

MiniatureCircularConnectors

HOSIDEN

HOSIDEN

TL7726

HEXCLAMPINGCIRCUITS

TITexas Instruments

德州仪器美国德州仪器公司

TL7726

HEXCLAMPINGCIRCUITS

TITexas Instruments

德州仪器美国德州仪器公司

详细参数

  • 型号:

    SI7726DN

  • 功能描述:

    MOSFET 30V 35A 52W 9.5mohm @ 10V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VIS
23+
QFN8
5000
原装正品,假一罚十
询价
23+
N/A
49100
正品授权货源可靠
询价
VB
2019
QFN8
55000
绝对原装正品假一罚十!
询价
VBSEMI
19+
QFN8
29600
绝对原装现货,价格优势!
询价
VISHAY
2013+
QFN8
284
特价热销现货库存
询价
VISHAY
2022
5880
原厂原装正品,价格超越代理
询价
VISHAY
1436+
QFN
30000
绝对原装进口现货可开增值税发票
询价
VISHAY
2017+
POWERPAK1212-8
78459
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
Vishay/Siliconix
07+/08+
PowerPAK1212-8
7500
询价
VISHAY
23+
1212-8
6680
全新原装优势
询价
更多SI7726DN供应商 更新时间2024-5-14 15:36:00