SI3457DV

Single P-Channel Logic Level PowerTrench MOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–4A,–30V.RDS(ON)=50mΩ@VGS=–10V RDS(ON)=75mΩ@VGS=–4.5V •Low

SI3457DV-T1-E3

P-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch

SI3457DV-T1-GE3

P-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch

AM3457P

P-Channel30-V(D-S)MOSFET

AM3457PE

P-Channel30-V(D-S)MOSFET

C3457

SiliconNPNPowerTransistors

CDT3457

???LED雍멨눣?㎩댍IC

CPH3457

N-ChannelPowerMOSFET

Features •ON-resistanceRDS(on)1=73mΩ(typ.) •1.8Vdrive •Halogenfreecompliance •Protectiondiodein

CPH3457

General-PurposeSwitchingDeviceApplications

Features •ON-resistanceRDS(on)1=73mΩ(typ.) •1.8Vdrive •Halogenfreecompliance •Protectiondiodein

CPH3457-TL-H

N-ChannelPowerMOSFET

Features •ON-resistanceRDS(on)1=73mΩ(typ.) •1.8Vdrive •Halogenfreecompliance •Protectiondiodein

CPH3457-TL-H

General-PurposeSwitchingDeviceApplications

CPH3457-TL-W

N-ChannelPowerMOSFET

Features •ON-resistanceRDS(on)1=73mΩ(typ.) •1.8Vdrive •Halogenfreecompliance •Protectiondiodein

EPA3457G

T1/CEPT/ISDN-PRITransformer

MSP3457G

MultistandardSoundProcessorFamily

TheMSP34x7Gfamilyofsingle-chipMultistandardSoundProcessorscoversthesoundprocessingofallanalogTVstandardsworldwide,aswellastheNICAMdigitalsoundstandards.ThefullTVsoundprocessing,startingwithanalogsoundIFsignal-in,downtoprocessedanalogAF-out,isperformedin

PE3457

CableAssembly

PE3457LF

CABLEASSEMBLYRG58C/UMALETOCMALE(LEADFREE)

PST3457

CMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

PST3457

ICforCMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

SI3457BDV

P-Channel30-V(D-S)MOSFET

SI3457CDV

P-Channel30-V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •Materialcategorization:   fordefinitionsofcompliancepleasesee   www.vishay.com/doc?99912 APPLICATIONS •Loadswitch