SFR20S60T规格书应用电路原装现货-114ic电子网

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SFR20S60T	文件：758.64 Kbytes Page：2 Pages	20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
20S60FA	文件：736.64 Kbytes Page：2 Pages	20.0AmpereInsulatedDualCommonCathodeUltraFastRecoveryRectifiers	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
20S60FA	文件：280.28 Kbytes Page：2 Pages	20.0AmpereInsulatedDualCommonCathodeSuperFastRecoveryRectifiers	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
AOB20S60	文件：330.4 Kbytes Page：7 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB20S60	文件：299.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) •100avalanchetested •MinimumLot-to-L	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOB20S60L	文件：330.39 Kbytes Page：7 Pages	600V20AaMOSTMPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB20S60L	文件：519.87 Kbytes Page：7 Pages	600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOK20S60	文件：325.78 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •WithTO-247packaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •PFCstages •Powersupply •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOK20S60	文件：256.839 Kbytes Page：6 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOK20S60L	文件：453.66 Kbytes Page：6 Pages	600V20AaMOS GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOK20S60L	文件：422.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) •100avalanchetested •MinimumLot-to-L	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT20S60	文件：330.4 Kbytes Page：7 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT20S60	文件：298.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT20S60L	文件：298.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT20S60L	文件：519.87 Kbytes Page：7 Pages	600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF20S60	文件：330.4 Kbytes Page：7 Pages	600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF20S60	文件：519.87 Kbytes Page：7 Pages	600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF20S60	文件：1.15441 Mbytes Page：11 Pages	N-Channel650-V(D-S)SuperJunctionMOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
AOTF20S60	文件：296.46 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOTF20S60L	文件：296.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	SFR20U20PN	SILAN	2020+	TO-3P	4100	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市中利达电子科技有限公司	SFR20U20PN	士兰微	23+	TO-3P	127600	IR英飞凌VISHAY专做全新原装进口正品假一赔百,可开13	询价
深圳兆威电子有限公司	SFR20U20PN	士兰微	23+	TO-3P	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市航润创能电子集团有限公司	SFR20U20PN	士兰微	21+	TO-3P	198	原装现货假一赔十	询价
深圳市保之丰科技有限公司	SFR20U20PN	士兰微	21+	TO-3P	6800		询价
深圳市国宇半导体科技有限公司	SFR20U20PN	士兰微	23+	TO-3PN	10000	公司只做原装正品	询价
深圳市能创芯电子科技有限公司	SFR20U20PN	士兰微	23+	TO-3P	4500	原装正品假一罚百!可开增票!	询价
深圳市威尔健半导体有限公司	SFR20U20PN	士兰微	23+	TO-3P	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	SFR20U20PN	SILAN	21+	TO-3P	10000	原装现货假一罚十	询价
深圳廊盛科技有限公司	SFR20U20PN	士兰微	2022	TO-3P	80000	原装现货,OEM渠道,欢迎咨询	询价

更多SFR20S60T供应商更新时间2024-6-18 9:08:00

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