| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforuseindriveandoutputstagesofaudioamplifiers. | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM | ||
EPITAXIALPLANARNPNTRANSISTOR | KECKEC CORPORATION KEC株式会社 | KEC | ||
Highcurrentapplication Descriptions •Highcurrentapplication •Switchingapplication Features •SuitableforAF-Driverstageandlowpoweroutputstages •ComplementarypairwithBC807 | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
Plastic-EncapsulateTransistors BC817-16(NPN) BC817-25(NPN) BC817-40(NPN) FEATURES ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807(PNP) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | HOTTECH | ||
NPNSiliconEpitaxialPlannarTransistors | FCI Amphenol ICC | FCI | ||
Surfacemountswitchingdiode Features •ForgeneralAFapplication. •ComplementaryPNPtypeavailableBC807. •Highcollectorcurrent,highcurrentgain. •Lowcollector-emittersaturationvoltage. •RoHScompliantpackage Applications •Generalpurposemediumpoweramplifier. •Switchingrequiringcollectorcurrents | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH | ||
SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | Diotec | ||
NPNGENERALPURPOSETRANSISTORS VOLTAGE45VoltsPOWER225mWatts FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=500mA •Pbfreeproductareavailable:99SnabovecanmeetRoHSenvironmentsubstancedirectiverequest | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors | DiotecDIOTEC 德欧泰克 | Diotec | ||
NPNSiliconAFTransistors Features ●ForgeneralAFapplications. ●Highcollectorcurrent. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
45V,500mANPNgeneral-purposetransistors Generaldescription NPNgeneral-purposetransistors. Features ■Highcurrent ■Lowvoltage Applications ■General-purposeswitchingandamplification | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPNSiliconPlanarEpitaxialTransistor | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
NPNSiliconEpitaxialPlanarTransistors NPNSiliconEpitaxialPlanarTransistors forswitching,AFdriverandamplifierapplication, Thesetransistorsaresubdividedintothreegroups –16,-25,-40accordingtotheircurrentgain. Ascomplementarytypes,thePNPtransistors BC807andBC808arerecommended. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | ||
NPNEPITAXIALSILICONTRANSISTOR Features •SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC807/BC808 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ForSwitching,AFDriverandAmplifierApplications ●ComplementaryPNPTypesAvailable(BC807) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
SmallSignalTransistors(NPN) FEATURES ♦NPNSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. ♦Especiallysuitedforautomaticinsertioninthick-andthin-filmcircuits. ♦Thesetransistorsaresubdividedintothreegroups-16,-25and-40accordingtotheircurrentgain. ♦Ascom | GE GE Industrial Company | GE | ||
EPITAXAILPLANARNPNTRANSISTOR(forGeneralPurpose,Switching) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ComplementarytoBC807. | KECKEC CORPORATION KEC株式会社 | KEC | ||
NPNSiliconTransistor(HighcurrentapplicationSwitchingapplication) Descriptions •Highcurrentapplication •Switchingapplication Features •SuitableforAF-Driverstageandlowpoweroutputstages •ComplementarypairwithBC807 | AUK AUK | AUK | ||
NPNgeneralpurposetransistor DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplement:BC807. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryPNPTypesAvailable(BC807) | TRSYS Transys Electronics | TRSYS |
详细参数
- 型号：
SDR817TXV
- 制造商：
SSDI
- 制造商全称：
Solid States Devices, Inc
- 功能描述：
100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
2017+ |
SMD |
24589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
QUALCOMM/高通 |
19+ |
BGA |
1200 |
原装正品欢迎来电咨询 |
询价 | ||
QUALCOMM/高通 |
2021+ |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
QUALCOMM/高通 |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
QUALCOMM/高通 |
24+ |
BGA |
89000 |
原装假一赔十现货可签原装协议/可含税出 |
询价 | ||
QUALCOMM |
1847 |
null |
47 |
全新、原装 |
询价 | ||
QUALCOMM |
22+ |
NA |
9958 |
原装正品支持实单 |
询价 | ||
QUALCOMM/高通 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
QUALCOMM/高通 |
2022 |
BGA |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
QUALCOMM/高通 |
22+ |
BGA |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 |
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