SCT20N120中文资料PDF规格书
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Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Features
• Very tight variation of on-resistance vs. temperature
• Slight variation of switching losses vs. temperature
• Very high operating temperature capability (200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
• Easy to drive
Applications
• Solar inverters, UPS
• Motor drives
• High voltage DC-DC converters
• Switch mode power supplies
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
HiP-247-3 |
8800 |
公司只做原装正品 |
询价 | ||
ST |
22 |
T0247 |
25000 |
3月31原装,微信报价 |
询价 | ||
ST |
22+ |
TO-247 |
25000 |
原厂原装,价格优势!13246658303 |
询价 | ||
ST |
21+ |
TO2473 |
13880 |
公司只售原装,支持实单 |
询价 | ||
ST |
21+ |
TO-247-3 |
3400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
22+ |
T0247 |
6500 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ST/意法半导体 |
2023 |
HiP-247-3 |
4800 |
公司原装现货/支持实单 |
询价 | ||
ST |
2021+ |
HIP247 |
3000 |
只做原装,可提供样品 |
询价 | ||
STMicroelectronics |
23+ |
HiP-247-3 |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
ST(意法半导体) |
20+ |
HiP-247 |
30 |
询价 |